TY - JOUR
T1 - Intrinsic-Strain Engineering by Dislocation Imprint in Bulk Ferroelectrics
AU - Zhuo, Fangping
AU - Zhou, Xiandong
AU - Gao, Shuang
AU - Dietrich, Felix
AU - Groszewicz, Pedro B.
AU - Fulanović, Lovro
AU - Breckner, Patrick
AU - Xu, Bai Xiang
AU - Kleebe, Hans Joachim
AU - More Authors, null
PY - 2023
Y1 - 2023
N2 - We report an intrinsic strain engineering, akin to thin filmlike approaches, via irreversible high-temperature plastic deformation of a tetragonal ferroelectric single-crystal BaTiO3. Dislocations well-aligned along the [001] axis and associated strain fields in plane defined by the [110]/[1¯10] plane are introduced into the volume, thus nucleating only in-plane domain variants. By combining direct experimental observations and theoretical analyses, we reveal that domain instability and extrinsic degradation processes can both be mitigated during the aging and fatigue processes, and demonstrate that this requires careful strain tuning of the ratio of in-plane and out-of-plane domain variants. Our findings advance the understanding of structural defects that drive domain nucleation and instabilities in ferroic materials and are essential for mitigating device degradation.
AB - We report an intrinsic strain engineering, akin to thin filmlike approaches, via irreversible high-temperature plastic deformation of a tetragonal ferroelectric single-crystal BaTiO3. Dislocations well-aligned along the [001] axis and associated strain fields in plane defined by the [110]/[1¯10] plane are introduced into the volume, thus nucleating only in-plane domain variants. By combining direct experimental observations and theoretical analyses, we reveal that domain instability and extrinsic degradation processes can both be mitigated during the aging and fatigue processes, and demonstrate that this requires careful strain tuning of the ratio of in-plane and out-of-plane domain variants. Our findings advance the understanding of structural defects that drive domain nucleation and instabilities in ferroic materials and are essential for mitigating device degradation.
UR - http://www.scopus.com/inward/record.url?scp=85164616303&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.131.016801
DO - 10.1103/PhysRevLett.131.016801
M3 - Article
AN - SCOPUS:85164616303
SN - 0031-9007
VL - 131
JO - Physical review letters
JF - Physical review letters
IS - 1
M1 - 016801
ER -