Low percolation density and charge noise with holes in germanium

M. Lodari; N.W. Hendrickx; W.I.L. Lawrie; T. Hsiao; L.M.K. Vandersypen; A. Sammak; M. Veldhorst; G. Scappucci

doi:10.1088/2633-4356/abcd82

Low percolation density and charge noise with holes in germanium

M. Lodari, N.W. Hendrickx, W.I.L. Lawrie, T. Hsiao, L.M.K. Vandersypen, A. Sammak, M. Veldhorst, G. Scappucci

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Abstract

We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quiet
operation of hole quantum dots and we measure an average charge noise level of √SE = 0.6 μeV/√Hz at 1 Hz, with the lowest level below our detection limit√SE = 0.2 μeV/√Hz. These results establish planar Ge as a promising platform for scaledtwo-dimensional spin qubit arrays

Original language	English
Article number	011002
Number of pages	7
Journal	Materials for Quantum Technology
Volume	1
Issue number	1
DOIs	https://doi.org/10.1088/2633-4356/abcd82
Publication status	Published - 2021

Keywords

quantum technology
germanium
charge noise
quantum dots

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10.1088/2633-4356/abcd82

Lodari_2021_Mater._Quantum_Technol._1_011002Final published version, 1.94 MBLicence: CC BY

Cite this

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title = "Low percolation density and charge noise with holes in germanium",

abstract = "We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quietoperation of hole quantum dots and we measure an average charge noise level of √SE = 0.6 μeV/√Hz at 1 Hz, with the lowest level below our detection limit√SE = 0.2 μeV/√Hz. These results establish planar Ge as a promising platform for scaledtwo-dimensional spin qubit arrays",

keywords = "quantum technology, germanium, charge noise, quantum dots",

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AU - Lodari, M.

AU - Hendrickx, N.W.

AU - Lawrie, W.I.L.

AU - Hsiao, T.

AU - Vandersypen, L.M.K.

AU - Sammak, A.

AU - Veldhorst, M.

AU - Scappucci, G.

PY - 2021

Y1 - 2021

N2 - We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quietoperation of hole quantum dots and we measure an average charge noise level of √SE = 0.6 μeV/√Hz at 1 Hz, with the lowest level below our detection limit√SE = 0.2 μeV/√Hz. These results establish planar Ge as a promising platform for scaledtwo-dimensional spin qubit arrays

AB - We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quietoperation of hole quantum dots and we measure an average charge noise level of √SE = 0.6 μeV/√Hz at 1 Hz, with the lowest level below our detection limit√SE = 0.2 μeV/√Hz. These results establish planar Ge as a promising platform for scaledtwo-dimensional spin qubit arrays

KW - quantum technology

KW - germanium

KW - charge noise

KW - quantum dots

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DO - 10.1088/2633-4356/abcd82

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JO - Materials for Quantum Technology

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Low percolation density and charge noise with holes in germanium

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Low percolation density and charge noise with holes in germanium

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