Low percolation density and charge noise with holes in germanium

M. Lodari; N.W. Hendrickx; W.I.L. Lawrie; T. Hsiao; L.M.K. Vandersypen; A. Sammak; M. Veldhorst; G. Scappucci

doi:10.1088/2633-4356/abcd82

Low percolation density and charge noise with holes in germanium

M. Lodari, N.W. Hendrickx, W.I.L. Lawrie, T. Hsiao, L.M.K. Vandersypen, A. Sammak, M. Veldhorst, G. Scappucci

Research output: Contribution to journal › Article › Scientific › peer-review

22 Citations (Scopus)

110 Downloads (Pure)

Abstract

We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quiet
operation of hole quantum dots and we measure an average charge noise level of √SE = 0.6 μeV/√Hz at 1 Hz, with the lowest level below our detection limit√SE = 0.2 μeV/√Hz. These results establish planar Ge as a promising platform for scaledtwo-dimensional spin qubit arrays

Original language	English
Article number	011002
Number of pages	7
Journal	Materials for Quantum Technology
Volume	1
Issue number	1
DOIs	https://doi.org/10.1088/2633-4356/abcd82
Publication status	Published - 2021

Keywords

quantum technology
germanium
charge noise
quantum dots

Access to Document

10.1088/2633-4356/abcd82

Lodari_2021_Mater._Quantum_Technol._1_011002Final published version, 1.94 MBLicence: CC BY

Cite this

@article{f7af7217bd69428c877a4b9be5148674,

title = "Low percolation density and charge noise with holes in germanium",

abstract = "We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quietoperation of hole quantum dots and we measure an average charge noise level of √SE = 0.6 μeV/√Hz at 1 Hz, with the lowest level below our detection limit√SE = 0.2 μeV/√Hz. These results establish planar Ge as a promising platform for scaledtwo-dimensional spin qubit arrays",

keywords = "quantum technology, germanium, charge noise, quantum dots",

author = "M. Lodari and N.W. Hendrickx and W.I.L. Lawrie and T. Hsiao and L.M.K. Vandersypen and A. Sammak and M. Veldhorst and G. Scappucci",

year = "2021",

doi = "10.1088/2633-4356/abcd82",

language = "English",

volume = "1",

journal = "Materials for Quantum Technology",

issn = "2633-4356",

publisher = "IOP Publishing",

number = "1",

}

TY - JOUR

T1 - Low percolation density and charge noise with holes in germanium

AU - Lodari, M.

AU - Hendrickx, N.W.

AU - Lawrie, W.I.L.

AU - Hsiao, T.

AU - Vandersypen, L.M.K.

AU - Sammak, A.

AU - Veldhorst, M.

AU - Scappucci, G.

PY - 2021

Y1 - 2021

N2 - We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quietoperation of hole quantum dots and we measure an average charge noise level of √SE = 0.6 μeV/√Hz at 1 Hz, with the lowest level below our detection limit√SE = 0.2 μeV/√Hz. These results establish planar Ge as a promising platform for scaledtwo-dimensional spin qubit arrays

AB - We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quietoperation of hole quantum dots and we measure an average charge noise level of √SE = 0.6 μeV/√Hz at 1 Hz, with the lowest level below our detection limit√SE = 0.2 μeV/√Hz. These results establish planar Ge as a promising platform for scaledtwo-dimensional spin qubit arrays

KW - quantum technology

KW - germanium

KW - charge noise

KW - quantum dots

UR - http://www.scopus.com/inward/record.url?scp=85127256488&partnerID=8YFLogxK

U2 - 10.1088/2633-4356/abcd82

DO - 10.1088/2633-4356/abcd82

M3 - Article

SN - 2633-4356

VL - 1

JO - Materials for Quantum Technology

JF - Materials for Quantum Technology

IS - 1

M1 - 011002

ER -

Low percolation density and charge noise with holes in germanium

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Data underlying the publication "Low percolation density and charge noise with holes in germanium"

Cite this

Low percolation density and charge noise with holes in germanium

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Datasets

Data underlying the publication "Low percolation density and charge noise with holes in germanium"

Cite this