Low percolation density and charge noise with holes in germanium

Research output: Contribution to journalArticleScientificpeer-review

23 Downloads (Pure)

Abstract

We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quiet
operation of hole quantum dots and we measure an average charge noise level of √SE = 0.6 μeV/√Hz at 1 Hz, with the lowest level below our detection limit√SE = 0.2 μeV/√Hz. These results establish planar Ge as a promising platform for scaledtwo-dimensional spin qubit arrays
Original languageEnglish
Number of pages7
JournalMaterials for Quantum Technology
Volume1
DOIs
Publication statusPublished - 2021

Keywords

  • quantum technology
  • germanium
  • charge noise
  • quantum dots

Fingerprint

Dive into the research topics of 'Low percolation density and charge noise with holes in germanium'. Together they form a unique fingerprint.

Cite this