Abstract
In this chapter, a new technology for low‐temperature (LT, 400°C) boron deposition is developed, which provides a smooth, uniform, closed LT boron layer. This technology is successfully employed to create near‐ideal LT PureB (pure boron) diodes with low, deep junction‐like saturation currents, allowing full integration of LT PureB photodiodes with electronic interface circuits and other sensors on a single chip. In this way, smart‐sensor systems or even charge‐coupled device (CCD) or complementary metal oxide semiconductor (CMOS) ultraviolet (UV) imagers can be realised.
Original language | English |
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Title of host publication | Chemical Vapor Deposition |
Subtitle of host publication | Recent Advances and Applications in Optical, Solar Cells and Solid State Devices |
Editors | Sudheer Neralla |
Publisher | Intech |
Pages | 137-157 |
Number of pages | 21 |
ISBN (Electronic) | 978-953-51-2573-0 |
ISBN (Print) | 978-953-51-2572-3 |
DOIs | |
Publication status | Published - 2016 |
Keywords
- low‐temperature boron deposition
- ultrashallow p+n junction photodiode
- chemical vapour deposition
- UV photodetector
- CMOS imager
- OA-Fund TU Delft