Low‐Temperature PureB CVD Technology for CMOS Compatible Photodetectors

Vahid Mohammadi, Stoyan Nihtianov

Research output: Chapter in Book/Conference proceedings/Edited volumeChapterScientific

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Abstract

In this chapter, a new technology for low‐temperature (LT, 400°C) boron deposition is developed, which provides a smooth, uniform, closed LT boron layer. This technology is successfully employed to create near‐ideal LT PureB (pure boron) diodes with low, deep junction‐like saturation currents, allowing full integration of LT PureB photodiodes with electronic interface circuits and other sensors on a single chip. In this way, smart‐sensor systems or even charge‐coupled device (CCD) or complementary metal oxide semiconductor (CMOS) ultraviolet (UV) imagers can be realised.
Original languageEnglish
Title of host publicationChemical Vapor Deposition
Subtitle of host publicationRecent Advances and Applications in Optical, Solar Cells and Solid State Devices
EditorsSudheer Neralla
PublisherIntech
Pages137-157
Number of pages21
ISBN (Electronic)978-953-51-2573-0
ISBN (Print)978-953-51-2572-3
DOIs
Publication statusPublished - 2016

Keywords

  • low‐temperature boron deposition
  • ultrashallow p+n junction photodiode
  • chemical vapour deposition
  • UV photodetector
  • CMOS imager
  • OA-Fund TU Delft

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