Measuring plastic deformation in epitaxial silicon after thermal oxidation

K. V. Sweers, P. R. Kuppens, N. Tolou

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

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Abstract

Residual stress from thermal oxidation can cause plastic deformation in silicon microelectromechanical systems (MEMS). This paper presents a novel method to distinguish elastic and plastic strain in silicon beams, by removing the oxide layer to show the plastic strain. A lever mechanism is used as a mechanical amplifier. The plasticity model by Alexander and Haassen (AH) is used in a numerical model to predict the elastic and plastic strain. Experiments in epitaxially grown silicon show significantly less plastic strain than predicted by the model. We conclude that the AH model is not valid for epitaxially grown silicon with very little initial dislocations. Since epitaxially grown silicon generally has less dislocations compared to floating zone silicon we recommend using the former when plastic deformation is to be avoided.

Original languageEnglish
Title of host publicationProceedings of MARSS 2019
Subtitle of host publication4th International Conference on Manipulation, Automation, and Robotics at Small Scales
EditorsSinan Haliyo, Albert Sill, Quan Zhou, Pasi Kallio, Sergej Fatikow
Place of PublicationPiscataway, NJ, USA
PublisherIEEE
Number of pages8
ISBN (Electronic)978-1-7281-0947-3
ISBN (Print)978-1-7281-0948-0
DOIs
Publication statusPublished - 2019
Event4th International Conference on Manipulation, Automation, and Robotics at Small Scales, MARSS 2019 - Aalto University, Helsinki, Finland
Duration: 1 Jul 20195 Jul 2019
https://marss-conference.org/

Conference

Conference4th International Conference on Manipulation, Automation, and Robotics at Small Scales, MARSS 2019
Abbreviated titleMARSS 2019
CountryFinland
CityHelsinki
Period1/07/195/07/19
Internet address

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