Measuring residual stresses in individual on-chip interconnects using synchrotron nanodiffraction

Yaqian Zhang, Leiming Du, Olof Bäcke, Sebastian Kalbfleisch, Guoqi Zhang, Sten Vollebregt, Magnus Hörnqvist Colliander*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

As the dimensions of interconnects in integrated circuits continue to shrink, an urgent need arises to understand the physical mechanism associated with electromigration. Using x-ray nanodiffraction, we analyzed the stresses in Blech-structured pure Cu lines subjected to different electromigration conditions. The results suggest that the measured residual stresses in the early stages of electromigration are related to relaxation of stresses caused by thermal expansion mismatch, while a developing current-induced stress leads to reductions in the residual stress after longer test times. These findings not only validate the feasibility of measuring stress in copper lines using nanodiffraction but also highlight the need for a further understanding, particularly through in situ electromigration experiments with x-ray nanodiffraction analysis.

Original languageEnglish
Article number083501
Number of pages6
JournalApplied Physics Letters
Volume124
Issue number8
DOIs
Publication statusPublished - 2024

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