Modeling of strained CMOS on disposable SiGe dots: Shape impacts on electrical/thermal characteristics

Sébastien Fregonese, Yan Zhuang, Joachim N. Burghartz

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)

    Abstract

    We proposed a new non-planar disposable SiGe dot (d-Dot) MOSFET based on Si-on-nothing technology. The new device concepts’ relies on self-assembled single-crystalline d-Dot. The d-Dot MOSFET is prone to a particularly high strain/stress from the underlaying SiGe 3D islands. We show that more than 50% higher mobilities of electrons can be obtained as indicated by 3D simulations performed throughout the entire fabrication process. Then, fully-depleted SOI MOSFET and d-Dot MOSFET are compared in term of short channel effects, parasitic capacitance effects and self-heating effects.
    Original languageEnglish
    Pages (from-to)919-925
    Number of pages7
    JournalSolid-State Electronics
    Volume52
    Issue number6
    DOIs
    Publication statusPublished - 2008

    Keywords

    • d-DOT FET
    • MOS
    • Strain
    • Stress
    • Self-heating
    • Short channel effect

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