MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons

Damian Bouwmeester*, Talieh S. Ghiasi, Gabriela Borin Barin, Klaus Müllen, Pascal Ruffieux, Roman Fasel, Herre S.J. van der Zant

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

23 Downloads (Pure)

Abstract

Atomically precise graphene nanoribbons (GNRs) are predicted to exhibit exceptional edge-related properties, such as localized edge states, spin polarization, and half-metallicity. However, the absence of low-resistance nanoscale electrical contacts to the GNRs hinders harnessing their properties in field-effect transistors. In this paper, we make electrical contact with nine-atom-wide armchair GNRs using superconducting alloy MoRe as well as Pd (as a reference), which are two of the metals providing low-resistance contacts to carbon nanotubes. We take a step toward contacting a single GNR by fabricating electrodes with needlelike geometry, with about 20 nm tip diameter and 10 nm separation. To preserve the nanoscale geometry of the contacts, we develop a PMMA-assisted technique to transfer the GNRs onto the prepatterned electrodes. Our device characterizations as a function of bias voltage and temperature show thermally activated gate-tunable conductance in GNR-MoRe-based transistors.

Original languageEnglish
Pages (from-to)13935-13944
Number of pages10
JournalACS Applied Nano Materials
Volume6
Issue number15
DOIs
Publication statusPublished - 2023

Keywords

  • electronic properties
  • field-effect transistor
  • graphene nanoribbons
  • metal−semiconductor contacts
  • substrate transfer
  • superconducting electrodes

Fingerprint

Dive into the research topics of 'MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons'. Together they form a unique fingerprint.

Cite this