TY - JOUR
T1 - MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons
AU - Bouwmeester, Damian
AU - Ghiasi, Talieh S.
AU - Borin Barin, Gabriela
AU - Müllen, Klaus
AU - Ruffieux, Pascal
AU - Fasel, Roman
AU - van der Zant, Herre S.J.
PY - 2023
Y1 - 2023
N2 - Atomically precise graphene nanoribbons (GNRs) are predicted to exhibit exceptional edge-related properties, such as localized edge states, spin polarization, and half-metallicity. However, the absence of low-resistance nanoscale electrical contacts to the GNRs hinders harnessing their properties in field-effect transistors. In this paper, we make electrical contact with nine-atom-wide armchair GNRs using superconducting alloy MoRe as well as Pd (as a reference), which are two of the metals providing low-resistance contacts to carbon nanotubes. We take a step toward contacting a single GNR by fabricating electrodes with needlelike geometry, with about 20 nm tip diameter and 10 nm separation. To preserve the nanoscale geometry of the contacts, we develop a PMMA-assisted technique to transfer the GNRs onto the prepatterned electrodes. Our device characterizations as a function of bias voltage and temperature show thermally activated gate-tunable conductance in GNR-MoRe-based transistors.
AB - Atomically precise graphene nanoribbons (GNRs) are predicted to exhibit exceptional edge-related properties, such as localized edge states, spin polarization, and half-metallicity. However, the absence of low-resistance nanoscale electrical contacts to the GNRs hinders harnessing their properties in field-effect transistors. In this paper, we make electrical contact with nine-atom-wide armchair GNRs using superconducting alloy MoRe as well as Pd (as a reference), which are two of the metals providing low-resistance contacts to carbon nanotubes. We take a step toward contacting a single GNR by fabricating electrodes with needlelike geometry, with about 20 nm tip diameter and 10 nm separation. To preserve the nanoscale geometry of the contacts, we develop a PMMA-assisted technique to transfer the GNRs onto the prepatterned electrodes. Our device characterizations as a function of bias voltage and temperature show thermally activated gate-tunable conductance in GNR-MoRe-based transistors.
KW - electronic properties
KW - field-effect transistor
KW - graphene nanoribbons
KW - metal−semiconductor contacts
KW - substrate transfer
KW - superconducting electrodes
UR - http://www.scopus.com/inward/record.url?scp=85166746248&partnerID=8YFLogxK
U2 - 10.1021/acsanm.3c01630
DO - 10.1021/acsanm.3c01630
M3 - Article
AN - SCOPUS:85166746248
VL - 6
SP - 13935
EP - 13944
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
SN - 2574-0970
IS - 15
ER -