On the Effect of the Amorphous Silicon Microstructure on the Grain Size of Solid Phase Crystallized Polycrystalline Silicon

K Sharma, A Branca, A Illiberi, FD Tichelaar, M Creatore, MCM van de Sanden

    Research output: Contribution to journalArticleScientificpeer-review

    8 Citations (Scopus)

    Abstract

    In this paper the effect of the microstructure of remote plasma-deposited amorphous silicon films on the grain size development in polycrystalline silicon upon solid-phase crystallization is reported. The hydrogenated amorphous silicon films are deposited at different microstructure parameter values R* (which represents the distribution of SiH(x) bonds in amorphous silicon), at constant hydrogen content. Amorphous silicon films undergo a phase transformation during solid-phase crystallization and the process results in fully (poly-)crystallized films. An increase in amorphous film structural disorder (i.e., an increase in R*), leads to the development of larger grain sizes (in the range of 700-1100 nm). When the microstructure parameter is reduced, the grain size ranges between 100 and 450 nm. These results point to the microstructure parameter having a key role in controlling the grain size of the polycrystalline silicon films and thus the performance of polycrystalline silicon solar cells.
    Original languageEnglish
    Pages (from-to)401-406
    Number of pages6
    JournalAdvanced Energy Materials
    Volume1
    Issue number3
    Publication statusPublished - 2011

    Keywords

    • Vakpubl., Overig wet. > 3 pag

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