Optical, structural, and electrical properties of Mg2NiH 4 thin films in situ grown by activated reactive evaporation

R. J. Westerwaal; M. Slaman; C. P. Broedersz; D. M. Borsa; B. Dam; R. Griessen; A. Borgschulte; W. Lohstroh; B. Kooi; G. Ten Brink; K. G. Tschersich; H. P. Fleischhauer

doi:10.1063/1.2349473

Optical, structural, and electrical properties of Mg₂NiH ₄ thin films in situ grown by activated reactive evaporation

R. J. Westerwaal^*, M. Slaman, C. P. Broedersz, D. M. Borsa, B. Dam, R. Griessen, A. Borgschulte, W. Lohstroh, B. Kooi, G. Ten Brink, K. G. Tschersich, H. P. Fleischhauer

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Mg₂NiH₄ thin films have been prepared by activated reactive evaporation in a molecular beam epitaxy system equipped with an atomic hydrogen source. The optical reflection spectra and the resistivity of the films are measured in situ during deposition. In situ grown Mg₂NiH ₄ appears to be stable in vacuum due to the fact that the dehydrogenation of the Mg₂NiH₄ phase is kinetically blocked. Hydrogen desorption only takes place when a Pd cap layer is added. The optical band gap of the in situ deposited Mg₂NiH₄ hydride, 1.75 eV, is in good agreement with that of Mg₂NiH₄ which has been formed ex situ by hydrogenation of metallic Pd capped Mg₂Ni films. The microstructure of these in situ grown films is characterized by a homogeneous layer with very small grain sizes. This microstructure suppresses the preferred hydride nucleation at the film/substrate interface which was found in as-grown Mg₂Ni thin films that are hydrogenated after deposition.

Original language	English
Article number	063518
Journal	Journal of Applied Physics
Volume	100
Issue number	6
DOIs	https://doi.org/10.1063/1.2349473
Publication status	Published - 2006

Bibliographical note

Funding Information:
This work is part of the research program of the Stichting voor Fundamenteel Onderzoek der Materie (FOM), financially supported by the Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO). The authors are grateful to H. Schreuders and J. H. Rector for technical support.

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Westerwaal, R. J., Slaman, M., Broedersz, C. P., Borsa, D. M., Dam, B., Griessen, R., Borgschulte, A., Lohstroh, W., Kooi, B., Ten Brink, G., Tschersich, K. G., & Fleischhauer, H. P. (2006). Optical, structural, and electrical properties of Mg₂NiH ₄ thin films in situ grown by activated reactive evaporation. Journal of Applied Physics, 100(6), Article 063518. https://doi.org/10.1063/1.2349473

@article{b6857fb39fad4e0ebe46822d1ff8ffb1,

title = "Optical, structural, and electrical properties of Mg2NiH 4 thin films in situ grown by activated reactive evaporation",

abstract = "Mg2NiH4 thin films have been prepared by activated reactive evaporation in a molecular beam epitaxy system equipped with an atomic hydrogen source. The optical reflection spectra and the resistivity of the films are measured in situ during deposition. In situ grown Mg2NiH 4 appears to be stable in vacuum due to the fact that the dehydrogenation of the Mg2NiH4 phase is kinetically blocked. Hydrogen desorption only takes place when a Pd cap layer is added. The optical band gap of the in situ deposited Mg2NiH4 hydride, 1.75 eV, is in good agreement with that of Mg2NiH4 which has been formed ex situ by hydrogenation of metallic Pd capped Mg2Ni films. The microstructure of these in situ grown films is characterized by a homogeneous layer with very small grain sizes. This microstructure suppresses the preferred hydride nucleation at the film/substrate interface which was found in as-grown Mg2Ni thin films that are hydrogenated after deposition.",

author = "Westerwaal, {R. J.} and M. Slaman and Broedersz, {C. P.} and Borsa, {D. M.} and B. Dam and R. Griessen and A. Borgschulte and W. Lohstroh and B. Kooi and {Ten Brink}, G. and Tschersich, {K. G.} and Fleischhauer, {H. P.}",

note = "Funding Information: This work is part of the research program of the Stichting voor Fundamenteel Onderzoek der Materie (FOM), financially supported by the Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO). The authors are grateful to H. Schreuders and J. H. Rector for technical support.",

year = "2006",

doi = "10.1063/1.2349473",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "6",

}

Westerwaal, RJ, Slaman, M, Broedersz, CP, Borsa, DM, Dam, B, Griessen, R, Borgschulte, A, Lohstroh, W, Kooi, B, Ten Brink, G, Tschersich, KG & Fleischhauer, HP 2006, 'Optical, structural, and electrical properties of Mg₂NiH ₄ thin films in situ grown by activated reactive evaporation', Journal of Applied Physics, vol. 100, no. 6, 063518. https://doi.org/10.1063/1.2349473

TY - JOUR

T1 - Optical, structural, and electrical properties of Mg2NiH 4 thin films in situ grown by activated reactive evaporation

AU - Westerwaal, R. J.

AU - Slaman, M.

AU - Broedersz, C. P.

AU - Borsa, D. M.

AU - Dam, B.

AU - Griessen, R.

AU - Borgschulte, A.

AU - Lohstroh, W.

AU - Kooi, B.

AU - Ten Brink, G.

AU - Tschersich, K. G.

AU - Fleischhauer, H. P.

N1 - Funding Information: This work is part of the research program of the Stichting voor Fundamenteel Onderzoek der Materie (FOM), financially supported by the Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO). The authors are grateful to H. Schreuders and J. H. Rector for technical support.

PY - 2006

Y1 - 2006

N2 - Mg2NiH4 thin films have been prepared by activated reactive evaporation in a molecular beam epitaxy system equipped with an atomic hydrogen source. The optical reflection spectra and the resistivity of the films are measured in situ during deposition. In situ grown Mg2NiH 4 appears to be stable in vacuum due to the fact that the dehydrogenation of the Mg2NiH4 phase is kinetically blocked. Hydrogen desorption only takes place when a Pd cap layer is added. The optical band gap of the in situ deposited Mg2NiH4 hydride, 1.75 eV, is in good agreement with that of Mg2NiH4 which has been formed ex situ by hydrogenation of metallic Pd capped Mg2Ni films. The microstructure of these in situ grown films is characterized by a homogeneous layer with very small grain sizes. This microstructure suppresses the preferred hydride nucleation at the film/substrate interface which was found in as-grown Mg2Ni thin films that are hydrogenated after deposition.

AB - Mg2NiH4 thin films have been prepared by activated reactive evaporation in a molecular beam epitaxy system equipped with an atomic hydrogen source. The optical reflection spectra and the resistivity of the films are measured in situ during deposition. In situ grown Mg2NiH 4 appears to be stable in vacuum due to the fact that the dehydrogenation of the Mg2NiH4 phase is kinetically blocked. Hydrogen desorption only takes place when a Pd cap layer is added. The optical band gap of the in situ deposited Mg2NiH4 hydride, 1.75 eV, is in good agreement with that of Mg2NiH4 which has been formed ex situ by hydrogenation of metallic Pd capped Mg2Ni films. The microstructure of these in situ grown films is characterized by a homogeneous layer with very small grain sizes. This microstructure suppresses the preferred hydride nucleation at the film/substrate interface which was found in as-grown Mg2Ni thin films that are hydrogenated after deposition.

UR - http://www.scopus.com/inward/record.url?scp=33749389547&partnerID=8YFLogxK

U2 - 10.1063/1.2349473

DO - 10.1063/1.2349473

M3 - Article

AN - SCOPUS:33749389547

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 063518

ER -

Optical, structural, and electrical properties of Mg₂NiH ₄ thin films in situ grown by activated reactive evaporation

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