Power gating of VLSI circuits using MEMS switches in low power applications

Hosam Shobak; Mohamed Ghoneim; Nawal El Boghdady; Sarah Halawa; Sophinese Iskander; Mohab Anis

doi:10.1109/ICM.2011.6177407

Power gating of VLSI circuits using MEMS switches in low power applications

Hosam Shobak^*, Mohamed Ghoneim, Nawal El Boghdady, Sarah Halawa, Sophinese Iskander, Mohab Anis

^*Corresponding author for this work

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

5 Citations (Scopus)

Abstract

Power dissipation poses a great challenge for VLSI designers. With the intense down-scaling of technology, the total power consumption of the chip is made up primarily of leakage power dissipation. This paper proposes combining a custom-designed MEMS switch to power gate VLSI circuits, such that leakage power is efficiently reduced while accounting for performance and reliability. The designed MEMS switch is characterized by an 0.1876 ? ON resistance and requires 4.5 V to switch. As a result of implementing this novel power gating technique, a standby leakage power reduction of 99% and energy savings of 33.3% are achieved. Finally the possible effects of surge currents and ground bounce noise are studied. These findings allow longer operation times for battery-operated systems characterized by long standby periods.

Original language	English
Title of host publication	2011 International Conference on Microelectronics, ICM 2011
DOIs	https://doi.org/10.1109/ICM.2011.6177407
Publication status	Published - 2011
Externally published	Yes
Event	2011 23rd International Conference on Microelectronics, ICM 2011 - Hammamet, Tunisia Duration: 19 Dec 2011 → 22 Dec 2011

Publication series

Name	Proceedings of the International Conference on Microelectronics, ICM

Conference

Conference	2011 23rd International Conference on Microelectronics, ICM 2011
Country/Territory	Tunisia
City	Hammamet
Period	19/12/11 → 22/12/11

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10.1109/ICM.2011.6177407

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title = "Power gating of VLSI circuits using MEMS switches in low power applications",

abstract = "Power dissipation poses a great challenge for VLSI designers. With the intense down-scaling of technology, the total power consumption of the chip is made up primarily of leakage power dissipation. This paper proposes combining a custom-designed MEMS switch to power gate VLSI circuits, such that leakage power is efficiently reduced while accounting for performance and reliability. The designed MEMS switch is characterized by an 0.1876 ? ON resistance and requires 4.5 V to switch. As a result of implementing this novel power gating technique, a standby leakage power reduction of 99% and energy savings of 33.3% are achieved. Finally the possible effects of surge currents and ground bounce noise are studied. These findings allow longer operation times for battery-operated systems characterized by long standby periods.",

author = "Hosam Shobak and Mohamed Ghoneim and {El Boghdady}, Nawal and Sarah Halawa and Sophinese Iskander and Mohab Anis",

year = "2011",

doi = "10.1109/ICM.2011.6177407",

language = "English",

isbn = "9781457722073",

series = "Proceedings of the International Conference on Microelectronics, ICM",

booktitle = "2011 International Conference on Microelectronics, ICM 2011",

note = "2011 23rd International Conference on Microelectronics, ICM 2011 ; Conference date: 19-12-2011 Through 22-12-2011",

}

Shobak, H, Ghoneim, M, El Boghdady, N, Halawa, S, Iskander, S & Anis, M 2011, Power gating of VLSI circuits using MEMS switches in low power applications. in 2011 International Conference on Microelectronics, ICM 2011., 6177407, Proceedings of the International Conference on Microelectronics, ICM, 2011 23rd International Conference on Microelectronics, ICM 2011, Hammamet, Tunisia, 19/12/11. https://doi.org/10.1109/ICM.2011.6177407

Power gating of VLSI circuits using MEMS switches in low power applications. / Shobak, Hosam; Ghoneim, Mohamed; El Boghdady, Nawal et al.
2011 International Conference on Microelectronics, ICM 2011. 2011. 6177407 (Proceedings of the International Conference on Microelectronics, ICM).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Power gating of VLSI circuits using MEMS switches in low power applications

AU - Shobak, Hosam

AU - Ghoneim, Mohamed

AU - El Boghdady, Nawal

AU - Halawa, Sarah

AU - Iskander, Sophinese

AU - Anis, Mohab

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N2 - Power dissipation poses a great challenge for VLSI designers. With the intense down-scaling of technology, the total power consumption of the chip is made up primarily of leakage power dissipation. This paper proposes combining a custom-designed MEMS switch to power gate VLSI circuits, such that leakage power is efficiently reduced while accounting for performance and reliability. The designed MEMS switch is characterized by an 0.1876 ? ON resistance and requires 4.5 V to switch. As a result of implementing this novel power gating technique, a standby leakage power reduction of 99% and energy savings of 33.3% are achieved. Finally the possible effects of surge currents and ground bounce noise are studied. These findings allow longer operation times for battery-operated systems characterized by long standby periods.

AB - Power dissipation poses a great challenge for VLSI designers. With the intense down-scaling of technology, the total power consumption of the chip is made up primarily of leakage power dissipation. This paper proposes combining a custom-designed MEMS switch to power gate VLSI circuits, such that leakage power is efficiently reduced while accounting for performance and reliability. The designed MEMS switch is characterized by an 0.1876 ? ON resistance and requires 4.5 V to switch. As a result of implementing this novel power gating technique, a standby leakage power reduction of 99% and energy savings of 33.3% are achieved. Finally the possible effects of surge currents and ground bounce noise are studied. These findings allow longer operation times for battery-operated systems characterized by long standby periods.

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T3 - Proceedings of the International Conference on Microelectronics, ICM

BT - 2011 International Conference on Microelectronics, ICM 2011

T2 - 2011 23rd International Conference on Microelectronics, ICM 2011

Y2 - 19 December 2011 through 22 December 2011

ER -

Power gating of VLSI circuits using MEMS switches in low power applications

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