Pure boron chemical vapor deposited layers; A new material for silicon device processing

LK Nanver; TLM Scholtes; F Sarubbi; WB De Boer; G Lorito; A Sakic; S Milosavljevic; C Mok Kai Rine; L Shi; S Nihtianov; K Buisman

doi:10.1109/RTP.2010.5623797

Pure boron chemical vapor deposited layers; A new material for silicon device processing

LK Nanver, TLM Scholtes, F Sarubbi, WB De Boer, G Lorito, A Sakic, S Milosavljevic, C Mok Kai Rine, L Shi, S Nihtianov, K Buisman

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

17 Citations (Scopus)

Original language	English
Title of host publication	Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010
Editors	B Lojek et al
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE Society
Pages	136-139
Number of pages	4
ISBN (Print)	978-1-4244-8393-3
DOIs	https://doi.org/10.1109/RTP.2010.5623797
Publication status	Published - 2010
Event	18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010, Gainesville, FL, USA - Piscataway, NJ, USA Duration: 28 Sept 2010 → 1 Oct 2010

Publication series

Name
Publisher	IEEE

Conference

Conference	18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010, Gainesville, FL, USA
Period	28/09/10 → 1/10/10

Keywords

Conf.proc. > 3 pag

Access to Document

10.1109/RTP.2010.5623797

Cite this

Nanver, LK., Scholtes, TLM., Sarubbi, F., De Boer, WB., Lorito, G., Sakic, A., Milosavljevic, S., Mok Kai Rine, C., Shi, L., Nihtianov, S., & Buisman, K. (2010). Pure boron chemical vapor deposited layers; A new material for silicon device processing. In B. Lojek et al (Ed.), Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010 (pp. 136-139). IEEE Society. https://doi.org/10.1109/RTP.2010.5623797

@inproceedings{82d1e31566314513ac8e9b69b8d7f209,

title = "Pure boron chemical vapor deposited layers; A new material for silicon device processing",

keywords = "Conf.proc. > 3 pag",

author = "LK Nanver and TLM Scholtes and F Sarubbi and {De Boer}, WB and G Lorito and A Sakic and S Milosavljevic and {Mok Kai Rine}, C and L Shi and S Nihtianov and K Buisman",

year = "2010",

doi = "10.1109/RTP.2010.5623797",

language = "English",

isbn = "978-1-4244-8393-3",

publisher = "IEEE Society",

pages = "136--139",

editor = "{Lojek et al}, B",

booktitle = "Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010",

note = "18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010, Gainesville, FL, USA ; Conference date: 28-09-2010 Through 01-10-2010",

}

Nanver, LK, Scholtes, TLM, Sarubbi, F, De Boer, WB, Lorito, G, Sakic, A, Milosavljevic, S, Mok Kai Rine, C, Shi, L, Nihtianov, S & Buisman, K 2010, Pure boron chemical vapor deposited layers; A new material for silicon device processing. in B Lojek et al (ed.), Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010. IEEE Society, Piscataway, NJ, USA, pp. 136-139, 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010, Gainesville, FL, USA, 28/09/10. https://doi.org/10.1109/RTP.2010.5623797

Pure boron chemical vapor deposited layers; A new material for silicon device processing. / Nanver, LK; Scholtes, TLM; Sarubbi, F et al.
Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010. ed. / B Lojek et al. Piscataway, NJ, USA: IEEE Society, 2010. p. 136-139.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Pure boron chemical vapor deposited layers; A new material for silicon device processing

AU - Nanver, LK

AU - Scholtes, TLM

AU - Sarubbi, F

AU - De Boer, WB

AU - Lorito, G

AU - Sakic, A

AU - Milosavljevic, S

AU - Mok Kai Rine, C

AU - Shi, L

AU - Nihtianov, S

AU - Buisman, K

PY - 2010

Y1 - 2010

KW - Conf.proc. > 3 pag

U2 - 10.1109/RTP.2010.5623797

DO - 10.1109/RTP.2010.5623797

M3 - Conference contribution

SN - 978-1-4244-8393-3

SP - 136

EP - 139

BT - Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010

A2 - Lojek et al, B

PB - IEEE Society

CY - Piscataway, NJ, USA

T2 - 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010, Gainesville, FL, USA

Y2 - 28 September 2010 through 1 October 2010

ER -