Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile

Ke Liu, Chunjian Tan, Shizhen Li, Wucheng Yuan, Xu Liu, Guoqi Zhang, Paddy French, Huaiyu Ye, Shaogang Wang*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping profiles to adjust the resistance of the upper half P-pillar. A higher P-pillar resistance can slow down the sweep out speed of hole carriers when the body diode is turned off, thus resulting in a smoother reverse recovery current and reducing the current recovery rate (d (Formula presented.) /d (Formula presented.)) from a peak to zero. The simulation results show that the reverse recovery peak current (I (Formula presented.)) of the two proposed devices decreased by 5% and 3%, respectively, compared to the conventional SJ. Additionally, the softness factor (S) increased by 64% and 55%, respectively. Furthermore, this study also demonstrates a trade-off relationship between static and reverse recovery characteristics with the adjustable doping profile, thus providing a guideline for actual application scenarios.

Original languageEnglish
Article number2977
Number of pages12
JournalElectronics (Switzerland)
Volume12
Issue number13
DOIs
Publication statusPublished - 2023

Keywords

  • superjunction
  • MOSFET
  • doping profile
  • reverse recovery
  • body diode

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