Selective photo-etching and TEM study of defects in hetero-epitaxial GaN.

JL Weyher, FD Tichelaar, HW Zandbergen, L Macht, PR Hageman

Research output: Contribution to journal › Article › Scientific › peer-review

Keywords

@article{ef0d858af8654effa2bd7f4eadd4f6a9,

title = "Selective photo-etching and TEM study of defects in hetero-epitaxial GaN.",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "JL Weyher and FD Tichelaar and HW Zandbergen and L Macht and PR Hageman",

year = "2001",

language = "Undefined/Unknown",

volume = "90",

pages = "6105--6109",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

}