Selective photo-etching and TEM study of defects in hetero-epitaxial GaN.

JL Weyher, FD Tichelaar, HW Zandbergen, L Macht, PR Hageman

    Research output: Contribution to journalArticleScientificpeer-review

    48 Citations (Scopus)
    Original languageUndefined/Unknown
    Pages (from-to)6105-6109
    Number of pages5
    JournalJournal of Applied Physics
    Volume90
    Publication statusPublished - 2001

    Keywords

    • ZX Int.klas.verslagjaar < 2002

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