Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si

L Qi; LK Nanver

doi:10.1109/ICMTS.2015.7106135

Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si

L Qi, LK Nanver

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

5 Citations (Scopus)

Original language	English
Title of host publication	Proceedings - 2015 International Conference on Microelectronic Test Structures
Editors	s.n.
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE Society
Pages	169-174
Number of pages	6
ISBN (Print)	978-1-4799-8302-5
DOIs	https://doi.org/10.1109/ICMTS.2015.7106135
Publication status	Published - 2015
Event	ICMTS 2015, Tempe, AZ, USA - Piscataway, NJ, USA Duration: 23 Mar 2015 → 26 Mar 2015

Publication series

Name
Publisher	IEEE

Conference

Conference	ICMTS 2015, Tempe, AZ, USA
Period	23/03/15 → 26/03/15

Bibliographical note

Harvest

Access to Document

10.1109/ICMTS.2015.7106135

Cite this

@inproceedings{c06e4d59393149349495b11934a2181e,

title = "Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si",

author = "L Qi and LK Nanver",

note = "Harvest; ICMTS 2015, Tempe, AZ, USA ; Conference date: 23-03-2015 Through 26-03-2015",

year = "2015",

doi = "10.1109/ICMTS.2015.7106135",

language = "English",

isbn = "978-1-4799-8302-5",

publisher = "IEEE Society",

pages = "169--174",

editor = "s.n.",

booktitle = "Proceedings - 2015 International Conference on Microelectronic Test Structures",

}

Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si. / Qi, L; Nanver, LK.
Proceedings - 2015 International Conference on Microelectronic Test Structures. ed. / s.n. Piscataway, NJ, USA: IEEE Society, 2015. p. 169-174.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si

AU - Qi, L

AU - Nanver, LK

N1 - Harvest

PY - 2015

Y1 - 2015

U2 - 10.1109/ICMTS.2015.7106135

DO - 10.1109/ICMTS.2015.7106135

M3 - Conference contribution

SN - 978-1-4799-8302-5

SP - 169

EP - 174

BT - Proceedings - 2015 International Conference on Microelectronic Test Structures

A2 - s.n., null

PB - IEEE Society

CY - Piscataway, NJ, USA

T2 - ICMTS 2015, Tempe, AZ, USA

Y2 - 23 March 2015 through 26 March 2015

ER -