Si and SiGe epitaxy in perspective

WB De Boer

Si and SiGe epitaxy in perspective

WB De Boer

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

Original language	Undefined/Unknown
Title of host publication	3rd international SiGe, Ge, & related compounds: materils, processing, and device symposium
Editors	D Harame, J Boquet, M Caymax
Place of Publication	Pennington, New Jersey, USA
Publisher	Electrochemical Society
Pages	13-25
Number of pages	13
Publication status	Published - 2008
Event	3rd international SiGe, Ge, & related compounds: materils, processing, and device symposium - Pennington, New Jersey, USA Duration: 12 Oct 2008 → 17 Oct 2008

Publication series

Name
Publisher	Electrochemical Society

Name	ECS Transactions
Volume	16
ISSN (Print)	1938-5862

Conference

Conference	3rd international SiGe, Ge, & related compounds: materils, processing, and device symposium
Period	12/10/08 → 17/10/08

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{7116330dd78f4a0bb8e33d01e700a0e6,

title = "Si and SiGe epitaxy in perspective",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "{De Boer}, WB",

year = "2008",

language = "Undefined/Unknown",

publisher = "Electrochemical Society",

pages = "13--25",

editor = "D Harame and J Boquet and M Caymax",

booktitle = "3rd international SiGe, Ge, & related compounds: materils, processing, and device symposium",

note = "3rd international SiGe, Ge, & related compounds: materils, processing, and device symposium ; Conference date: 12-10-2008 Through 17-10-2008",

}

De Boer, WB 2008, Si and SiGe epitaxy in perspective. in D Harame, J Boquet & M Caymax (eds), 3rd international SiGe, Ge, & related compounds: materils, processing, and device symposium. ECS Transactions, vol. 16, Electrochemical Society, Pennington, New Jersey, USA, pp. 13-25, 3rd international SiGe, Ge, & related compounds: materils, processing, and device symposium, 12/10/08.

Si and SiGe epitaxy in perspective. / De Boer, WB.
3rd international SiGe, Ge, & related compounds: materils, processing, and device symposium. ed. / D Harame; J Boquet; M Caymax. Pennington, New Jersey, USA: Electrochemical Society, 2008. p. 13-25 (ECS Transactions; Vol. 16).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

TY - GEN

T1 - Si and SiGe epitaxy in perspective

AU - De Boer, WB

PY - 2008

Y1 - 2008

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 13

EP - 25

BT - 3rd international SiGe, Ge, & related compounds: materils, processing, and device symposium

A2 - Harame, D

A2 - Boquet, J

A2 - Caymax, M

PB - Electrochemical Society

CY - Pennington, New Jersey, USA

T2 - 3rd international SiGe, Ge, & related compounds: materils, processing, and device symposium

Y2 - 12 October 2008 through 17 October 2008

ER -