Silicon anisotropy in a bi-dimensional optomechanical cavity

Cauê M. Kersul, Rodrigo Benevides, Flávio Moraes, Gabriel H.M. de Aguiar, Andreas Wallucks, Simon Gröblacher, Gustavo S. Wiederhecker, Thiago P. Mayer Alegre*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)
21 Downloads (Pure)

Abstract

In this work, we study the effects of mechanical anisotropy in a 2D optomechanical crystal geometry. We fabricate and measure devices with different orientations, showing the dependence of the mechanical spectrum and the optomechanical coupling on the relative angle of the device to the crystallography directions of silicon. Our results show that the device orientation strongly affects its mechanical band structure, which makes the devices more susceptible to orientation fabrication imperfections. Finally, we show that our device is compatible with cryogenic measurements, reaching a ground state occupancy of 0.25 phonons at mK temperature.

Original languageEnglish
Article number056112
Number of pages7
JournalAPL Photonics
Volume8
Issue number5
DOIs
Publication statusPublished - 2023

Fingerprint

Dive into the research topics of 'Silicon anisotropy in a bi-dimensional optomechanical cavity'. Together they form a unique fingerprint.

Cite this