Abstract
We present a theoretical study of hydrogenated amorphous silicon (a-Si:H) with a device quality hydrogen concentration of 11 at%. We used a first principle, parameters-free method. The interaction between the atoms was treated quantum mechanically within the density functional theory approximation. Amorphous structures were prepared by cooling from the liquid phase. When using a cooling rate of 0.02¿K/fs defect-free structures were prepared. All silicon atoms were fourfold coordinated and there were no defect states in the band gap. The calculated short range order showed a good agreement with available neutron scattering measurements. We further calculated the formation energy of dangling bonds (DBs; threefold coordinated Si atom) in all three charge states (negative, neutral, and positive) as a function of the Fermi energy. Interestingly, the DB correlation energies can have both positive and negative values.
Original language | English |
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Pages (from-to) | 605-608 |
Number of pages | 4 |
Journal | Physica Status Solidi. A: Applications and Materials Science |
Volume | 207 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2011 |
Keywords
- academic journal papers
- CWTS JFIS < 0.75