Structure and electronic properties of hydrogenated amorphous silicon nitride from first principles

K Jarolimek; RA de Groot; GA de Wijs; M Zeman

Structure and electronic properties of hydrogenated amorphous silicon nitride from first principles

K Jarolimek, RA de Groot, GA de Wijs, M Zeman

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	The annual workshop on semiconductor advances for future electronics and sensors
Editors	s.n.
Place of Publication	Veldhoven, the Netherlands
Publisher	STW
Pages	552-555
Number of pages	4
ISBN (Print)	978-90-73461-56-7
Publication status	Published - 2008
Event	SAFE 2008, Veldhoven, the Netherlands - Veldhoven, the Nederlands Duration: 27 Nov 2008 → 28 Nov 2008

Publication series

Name
Publisher	STW

Conference

Conference	SAFE 2008, Veldhoven, the Netherlands
Period	27/11/08 → 28/11/08

Keywords

Elektrotechniek
Techniek
conference contrib. refereed
Vakpubl., Overig wet. > 3 pag

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@inproceedings{bcd8895f9f14445fa34ed01377e94db9,

title = "Structure and electronic properties of hydrogenated amorphous silicon nitride from first principles",

keywords = "Elektrotechniek, Techniek, conference contrib. refereed, Vakpubl., Overig wet. > 3 pag",

author = "K Jarolimek and {de Groot}, RA and {de Wijs}, GA and M Zeman",

year = "2008",

language = "Undefined/Unknown",

isbn = "978-90-73461-56-7",

publisher = "STW",

pages = "552--555",

editor = "s.n.",

booktitle = "The annual workshop on semiconductor advances for future electronics and sensors",

note = "SAFE 2008, Veldhoven, the Netherlands ; Conference date: 27-11-2008 Through 28-11-2008",

}

Structure and electronic properties of hydrogenated amorphous silicon nitride from first principles. / Jarolimek, K; de Groot, RA; de Wijs, GA et al.
The annual workshop on semiconductor advances for future electronics and sensors. ed. / s.n. Veldhoven, the Netherlands: STW, 2008. p. 552-555.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Structure and electronic properties of hydrogenated amorphous silicon nitride from first principles

AU - Jarolimek, K

AU - de Groot, RA

AU - de Wijs, GA

AU - Zeman, M

PY - 2008

Y1 - 2008

KW - Elektrotechniek

KW - Techniek

KW - conference contrib. refereed

KW - Vakpubl., Overig wet. > 3 pag

M3 - Conference contribution

SN - 978-90-73461-56-7

SP - 552

EP - 555

BT - The annual workshop on semiconductor advances for future electronics and sensors

A2 - s.n., null

PB - STW

CY - Veldhoven, the Netherlands

T2 - SAFE 2008, Veldhoven, the Netherlands

Y2 - 27 November 2008 through 28 November 2008

ER -