Abstract
This paper presents the fabrication and electrical characterization of superconducting high-aspect ratio through-silicon vias DC-sputtered with aluminum. Fully conformal and void-free coating of 300 μm-deep and 50 μmwide vias with Al, a CMOS-compatible and widely available superconductor, was made possible by tailoring a funneled sidewall profile for the axisymmetric vias. Single-via electric resistance as low as 80.44 mΩ at room temperature and superconductivity below 1.28 K were measured by a crossbridge Kelvin resistor structure. This work thus demonstrates the fabrication of functional superconducting interposer layers, suitable for high-density 3D integration of silicon-based quantum computing architectures.
Original language | English |
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Pages (from-to) | 1114-1117 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 41 |
Issue number | 7 |
DOIs | |
Publication status | Published - Jul 2020 |
Bibliographical note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-careOtherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
Keywords
- Aluminum
- cryogenic
- interconnects
- sputtering
- superconducting
- through-silicon vias