Superconducting High-Aspect Ratio Through-Silicon Vias with DC-Sputtered Al for Quantum 3D integration

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)
97 Downloads (Pure)

Abstract

This paper presents the fabrication and electrical characterization of superconducting high-aspect ratio through-silicon vias DC-sputtered with aluminum. Fully conformal and void-free coating of 300 μm-deep and 50 μmwide vias with Al, a CMOS-compatible and widely available superconductor, was made possible by tailoring a funneled sidewall profile for the axisymmetric vias. Single-via electric resistance as low as 80.44 mΩ at room temperature and superconductivity below 1.28 K were measured by a crossbridge Kelvin resistor structure. This work thus demonstrates the fabrication of functional superconducting interposer layers, suitable for high-density 3D integration of silicon-based quantum computing architectures.
Original languageEnglish
Pages (from-to)1114-1117
Number of pages4
JournalIEEE Electron Device Letters
Volume41
Issue number7
DOIs
Publication statusPublished - Jul 2020

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care

Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

  • Aluminum
  • cryogenic
  • interconnects
  • sputtering
  • superconducting
  • through-silicon vias

Fingerprint

Dive into the research topics of 'Superconducting High-Aspect Ratio Through-Silicon Vias with DC-Sputtered Al for Quantum 3D integration'. Together they form a unique fingerprint.

Cite this