Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges

L Shi, S Nihtianov, L Haspeslagh, F Scholze, A Gottwald, LK Nanver

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	2888-2894
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	11
DOIs	https://doi.org/10.1109/TED.2012.2210225
Publication status	Published - 2012

Harvest

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title = "Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges",

author = "L Shi and S Nihtianov and L Haspeslagh and F Scholze and A Gottwald and LK Nanver",

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T1 - Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges

AU - Shi, L

AU - Nihtianov, S

AU - Haspeslagh, L

AU - Scholze, F

AU - Gottwald, A

AU - Nanver, LK

N1 - Harvest

PY - 2012

Y1 - 2012

U2 - 10.1109/TED.2012.2210225

DO - 10.1109/TED.2012.2210225

M3 - Article

SN - 0018-9383

VL - 59

SP - 2888

EP - 2894

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -