The etching of silicon carbide in inductively coupled SF6/O-2 plasma

NOV Plank, MA Blauw, EWJM van der Drift, R Cheung

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	482-487
Number of pages	6
Journal	Journal of Physics D: Applied Physics
Volume	36
Issue number	5
Publication status	Published - 2003

Keywords

@article{111308c8bd3346a5bd8496dbef6082e4,

title = "The etching of silicon carbide in inductively coupled SF6/O-2 plasma",

keywords = "academic journal papers, ZX CWTS JFIS < 1.00",

author = "NOV Plank and MA Blauw and {van der Drift}, EWJM and R Cheung",

year = "2003",

language = "Undefined/Unknown",

volume = "36",

pages = "482--487",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing",

number = "5",

}

TY - JOUR

T1 - The etching of silicon carbide in inductively coupled SF6/O-2 plasma

AU - Plank, NOV

AU - Blauw, MA

AU - van der Drift, EWJM

AU - Cheung, R

PY - 2003

Y1 - 2003

KW - academic journal papers

KW - ZX CWTS JFIS < 1.00

M3 - Article

SN - 0022-3727

VL - 36

SP - 482

EP - 487

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 5

ER -