TY - JOUR
T1 - Three-Dimensional Atomic-Scale Tomography of Buried Semiconductor Heterointerfaces
AU - Koelling, Sebastian
AU - Stehouwer, Lucas E.A.
AU - Paquelet Wuetz, Brian
AU - Scappucci, Giordano
AU - Moutanabbir, Oussama
PY - 2022
Y1 - 2022
N2 - Atom probes generate three-dimensional atomic-scale tomographies of material volumes corresponding to the size of modern-day solid-state devices. Here, the capabilities of atom probe tomography are evaluated to analyze buried interfaces in semiconductor heterostructures relevant for electronic and quantum devices. Employing brute-force search, the current dominant reconstruction protocol to generate tomographic three-dimensional images from Atom Probe data is advanced to its limits. Using Si/SiGe heterostructure for qubits as a model system, the authors show that it is possible to extract interface properties like roughness and width that agree with transmission electron microscopy observations on the sub-nanometer scale in an automated and highly reproducible manner. The demonstrated approach is a versatile method for atomic-scale characterization of buried interfaces in semiconductor heterostructures.
AB - Atom probes generate three-dimensional atomic-scale tomographies of material volumes corresponding to the size of modern-day solid-state devices. Here, the capabilities of atom probe tomography are evaluated to analyze buried interfaces in semiconductor heterostructures relevant for electronic and quantum devices. Employing brute-force search, the current dominant reconstruction protocol to generate tomographic three-dimensional images from Atom Probe data is advanced to its limits. Using Si/SiGe heterostructure for qubits as a model system, the authors show that it is possible to extract interface properties like roughness and width that agree with transmission electron microscopy observations on the sub-nanometer scale in an automated and highly reproducible manner. The demonstrated approach is a versatile method for atomic-scale characterization of buried interfaces in semiconductor heterostructures.
KW - atom probe tomography
KW - atomic scale microscopy
KW - epitaxial interfaces
KW - semiconductor heterostructures
UR - http://www.scopus.com/inward/record.url?scp=85143396655&partnerID=8YFLogxK
U2 - 10.1002/admi.202201189
DO - 10.1002/admi.202201189
M3 - Article
AN - SCOPUS:85143396655
SN - 2196-7350
VL - 10
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 3
M1 - 2201189
ER -