Abstract
This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre-and post-irradiation conditions.
Original language | English |
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Pages (from-to) | 51-57 |
Number of pages | 7 |
Journal | IEEE Transactions on Device and Materials Reliability |
Volume | 23 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2022 |
Externally published | Yes |
Keywords
- amplifier
- analog circuits
- cascode
- common gate
- common source
- Degradation
- Integrated circuit modeling
- ionizing radiation
- Leakage currents
- Radiation effects
- Radio frequency
- Threshold voltage
- TID
- Total ionizing dose
- Transistors