Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

Sadik Ilik; Mustafa Berke Yelten

doi:10.1109/TDMR.2022.3227766

Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

Sadik Ilik, Mustafa Berke Yelten

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre-and post-irradiation conditions.

Original language	English
Pages (from-to)	51-57
Number of pages	7
Journal	IEEE Transactions on Device and Materials Reliability
Volume	23
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2022.3227766
Publication status	Published - 2022
Externally published	Yes

Keywords

amplifier
analog circuits
cascode
common gate
common source
Degradation
Integrated circuit modeling
ionizing radiation
Leakage currents
Radiation effects
Radio frequency
Threshold voltage
TID
Total ionizing dose
Transistors

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10.1109/TDMR.2022.3227766

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title = "Total Ionizing Dose (TID) Impact on Basic Amplifier Stages",

abstract = "This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre-and post-irradiation conditions.",

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AB - This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre-and post-irradiation conditions.

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KW - analog circuits

KW - cascode

KW - common gate

KW - common source

KW - Degradation

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KW - Radiation effects

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Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

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