TY - GEN
T1 - A Comparative Study of Si3N4 and Al2O3 as Dielectric Materials for Pre-Charged Collapse-Mode CMUTs
AU - Saccher, Marta
AU - Schaijk, Rob van
AU - Kawasaki, Shinnosuke
AU - Klootwijk, Johan H.
AU - Rashidi, Amin
AU - Giagka, Vasiliki
AU - Savoia, Alessandro Stuart
AU - Dekker, Ronald
N1 - Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
PY - 2023
Y1 - 2023
N2 - Capacitive Micromachined Ultrasound Transducers (CMUTs) have many advantages compared to other ultrasonic transducer technologies, especially for implantable devices. However, they require a high bias voltage for efficient operation. To eliminate the need for an external bias voltage, a charge storage layer can be embedded in the dielectric. This study aims to compare the performance of Si 3 N 4 and Al 2 O 3 when used as a charge storage layer. By measuring the shift in the C-V curve, Si 3 N 4 exhibits a larger shift than Al 2 O 3 , indicating a better charge-trapping capability. When using the pre-charged CMUTs as power receivers, the Si 3 N 4 version harvested up to 80 mW -only a few mW more than the Al 2 O 3 - with an efficiency of about 50 %. Accelerated Lifetime Tests predict a lifetime of about 7.8 and 1.2 years for Si 3 N 4 and Al 2 O 3 respectively.
AB - Capacitive Micromachined Ultrasound Transducers (CMUTs) have many advantages compared to other ultrasonic transducer technologies, especially for implantable devices. However, they require a high bias voltage for efficient operation. To eliminate the need for an external bias voltage, a charge storage layer can be embedded in the dielectric. This study aims to compare the performance of Si 3 N 4 and Al 2 O 3 when used as a charge storage layer. By measuring the shift in the C-V curve, Si 3 N 4 exhibits a larger shift than Al 2 O 3 , indicating a better charge-trapping capability. When using the pre-charged CMUTs as power receivers, the Si 3 N 4 version harvested up to 80 mW -only a few mW more than the Al 2 O 3 - with an efficiency of about 50 %. Accelerated Lifetime Tests predict a lifetime of about 7.8 and 1.2 years for Si 3 N 4 and Al 2 O 3 respectively.
KW - pre-charged CMUT
KW - Capacitive Micromachined Ultrasound Transducer
KW - zero-bias transducers
KW - ultrasonic power transfer
UR - http://www.scopus.com/inward/record.url?scp=85178635405&partnerID=8YFLogxK
U2 - 10.1109/IUS51837.2023.10307389
DO - 10.1109/IUS51837.2023.10307389
M3 - Conference contribution
SN - 979-8-3503-4646-6
BT - Proceedings of the 2023 IEEE International Ultrasonics Symposium (IUS)
PB - IEEE
CY - Piscataway
T2 - 2023 IEEE International Ultrasonics Symposium (IUS)
Y2 - 3 September 2023 through 8 September 2023
ER -