A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer

Vahid Mohammadi^*, Stoyan Nihtianov, Changming Fang

^*Corresponding author for this work

Electronic Instrumentation

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2021

Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer (Scientific Reports, (2017), 7, 1, (13247), 10.1038/s41598-017-13100-0)
Mohammadi, V., Nihtianov, S. & Fang, C., 2021, In: Scientific Reports. 11, 1, 20579.
Research output: Contribution to journal › Comment/Letter to the editor › Scientific › peer-review

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