Base-contact proximity effects in bipolar transistors with nitride-spacer technology

HW van Zeijl; LK Nanver

doi:doi:10.1109/ESSDER.2005.1546684

Base-contact proximity effects in bipolar transistors with nitride-spacer technology

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	Proceedings of the 35th European solid-state device research conference (ESSDERC)
Editors	S Cristoloveanu, M Brillouët, T Skotnicki
Place of Publication	Piscataway
Publisher	IEEE Society
Pages	461-464
Number of pages	4
ISBN (Print)	1-56677-428-1
DOIs	https://doi.org/doi:10.1109/ESSDER.2005.1546684
Publication status	Published - 2005
Event	ESSDERC 2005, The 35th European Solid-State Device Research Conference, Grenoble, France - Piscataway Duration: 12 Sept 2005 → 16 Sept 2005

Publication series

Name
Publisher	IEEE

Conference

Conference	ESSDERC 2005, The 35th European Solid-State Device Research Conference, Grenoble, France
Period	12/09/05 → 16/09/05

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Access to Document

doi:10.1109/ESSDER.2005.1546684

Cite this

@inproceedings{0edef692211d4c428b77521ab6e3dae9,

title = "Base-contact proximity effects in bipolar transistors with nitride-spacer technology",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "{van Zeijl}, HW and LK Nanver",

year = "2005",

doi = "doi:10.1109/ESSDER.2005.1546684",

language = "Undefined/Unknown",

isbn = "1-56677-428-1",

publisher = "IEEE Society",

pages = "461--464",

editor = "S Cristoloveanu and M Brillou{\"e}t and T Skotnicki",

booktitle = "Proceedings of the 35th European solid-state device research conference (ESSDERC)",

note = "ESSDERC 2005, The 35th European Solid-State Device Research Conference, Grenoble, France ; Conference date: 12-09-2005 Through 16-09-2005",

}

van Zeijl, HW & Nanver, LK 2005, Base-contact proximity effects in bipolar transistors with nitride-spacer technology. in S Cristoloveanu, M Brillouët & T Skotnicki (eds), Proceedings of the 35th European solid-state device research conference (ESSDERC). IEEE Society, Piscataway, pp. 461-464, ESSDERC 2005, The 35th European Solid-State Device Research Conference, Grenoble, France, 12/09/05. https://doi.org/doi:10.1109/ESSDER.2005.1546684

Base-contact proximity effects in bipolar transistors with nitride-spacer technology. / van Zeijl, HW; Nanver, LK.
Proceedings of the 35th European solid-state device research conference (ESSDERC). ed. / S Cristoloveanu; M Brillouët; T Skotnicki. Piscataway: IEEE Society, 2005. p. 461-464.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Base-contact proximity effects in bipolar transistors with nitride-spacer technology

AU - van Zeijl, HW

AU - Nanver, LK

PY - 2005

Y1 - 2005

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

U2 - doi:10.1109/ESSDER.2005.1546684

DO - doi:10.1109/ESSDER.2005.1546684

M3 - Conference contribution

SN - 1-56677-428-1

SP - 461

EP - 464

BT - Proceedings of the 35th European solid-state device research conference (ESSDERC)

A2 - Cristoloveanu, S

A2 - Brillouët, M

A2 - Skotnicki, T

PB - IEEE Society

CY - Piscataway

T2 - ESSDERC 2005, The 35th European Solid-State Device Research Conference, Grenoble, France

Y2 - 12 September 2005 through 16 September 2005

ER -