Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device

X. Xue, T. F. Watson, J. Helsen, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, S. Wehner, L. M.K. Vandersypen

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Abstract

We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system, here giving a 92% fidelity estimate for the controlled-Z gate. Interestingly, with character randomized benchmarking, the two-qubit gate fidelity can be obtained by studying the additional decay induced by interleaving the two-qubit gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.

Original languageEnglish
Article number021011
Number of pages12
JournalPhysical Review X
Volume9
Issue number2
DOIs
Publication statusPublished - 2019

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    Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S., & Vandersypen, L. M. K. (2019). Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device. Physical Review X, 9(2), [021011]. https://doi.org/10.1103/PhysRevX.9.021011