Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device

X. Xue, T. F. Watson, J. Helsen, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, S. Wehner, L. M.K. Vandersypen

Research output: Contribution to journalArticleScientificpeer-review

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We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system, here giving a 92% fidelity estimate for the controlled-Z gate. Interestingly, with character randomized benchmarking, the two-qubit gate fidelity can be obtained by studying the additional decay induced by interleaving the two-qubit gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.

Original languageEnglish
Article number021011
Number of pages12
JournalPhysical Review X
Issue number2
Publication statusPublished - 2019

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