Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications

Yunfan  Niu; Jiarui Mo; Alexander May; Mathias Rommel; Chiara Rossi; Joost Romijn; Guoqi Zhang; Sten Vollebregt

doi:10.1109/SENSORS56945.2023.10325061

Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications

Yunfan Niu, Jiarui Mo^*, Alexander May, Mathias Rommel, Chiara Rossi, Joost Romijn, Guoqi Zhang, Sten Vollebregt^*

^*Corresponding author for this work

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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Abstract

This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of ADCs, i.e., a 4-bit flash ADC and a 6-bit successive-approximation (SAR) ADC, are designed and simulated up to 300 degrees Celsius. The measurement results show that the 4-bit SiC flash ADC can operate reliably up to at least 200 degrees Celsius, which outperforms the Si counterpart regarding the maximum operating temperature.

Original language	English
Title of host publication	Proceedings of the 2023 IEEE SENSORS
Place of Publication	Piscataway
Publisher	IEEE
Number of pages	4
ISBN (Electronic)	979-8-3503-0387-2
ISBN (Print)	979-8-3503-0388-9
DOIs	https://doi.org/10.1109/SENSORS56945.2023.10325061
Publication status	Published - 2023
Event	2023 IEEE SENSORS, SENSORS 2023 - Vienna, Austria Duration: 29 Oct 2023 → 1 Nov 2023

Publication series

Name	Proceedings of IEEE Sensors
ISSN (Print)	1930-0395
ISSN (Electronic)	2168-9229

Conference

Conference	2023 IEEE SENSORS, SENSORS 2023
Country/Territory	Austria
City	Vienna
Period	29/10/23 → 1/11/23

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

analog-to-digital converter
harsh-environment
silicon carbide

Access to Document

10.1109/SENSORS56945.2023.10325061

Design_and_Characterization_of_a_Data_Converter_in_a_SiC_CMOS_Technology_for_Harsh_Environment_Sensing_ApplicationsFinal published version, 2.33 MB

Cite this

@inproceedings{7eb76b4a6cb446b1a35d0fa2e457e972,

title = "Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications",

abstract = "This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of ADCs, i.e., a 4-bit flash ADC and a 6-bit successive-approximation (SAR) ADC, are designed and simulated up to 300 degrees Celsius. The measurement results show that the 4-bit SiC flash ADC can operate reliably up to at least 200 degrees Celsius, which outperforms the Si counterpart regarding the maximum operating temperature.",

keywords = "analog-to-digital converter, harsh-environment, silicon carbide",

author = "Yunfan Niu and Jiarui Mo and Alexander May and Mathias Rommel and Chiara Rossi and Joost Romijn and Guoqi Zhang and Sten Vollebregt",

note = "Green Open Access added to TU Delft Institutional Repository {\textquoteleft}You share, we take care!{\textquoteright} – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. ; 2023 IEEE SENSORS, SENSORS 2023 ; Conference date: 29-10-2023 Through 01-11-2023",

year = "2023",

doi = "10.1109/SENSORS56945.2023.10325061",

language = "English",

isbn = "979-8-3503-0388-9",

series = "Proceedings of IEEE Sensors",

publisher = "IEEE",

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address = "United States",

}

Niu, Y, Mo, J, May, A, Rommel, M, Rossi, C, Romijn, J, Zhang, G & Vollebregt, S 2023, Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications. in Proceedings of the 2023 IEEE SENSORS. Proceedings of IEEE Sensors, IEEE, Piscataway, 2023 IEEE SENSORS, SENSORS 2023, Vienna, Austria, 29/10/23. https://doi.org/10.1109/SENSORS56945.2023.10325061

Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications. / Niu, Yunfan ; Mo, Jiarui; May, Alexander et al.
Proceedings of the 2023 IEEE SENSORS. Piscataway: IEEE, 2023. (Proceedings of IEEE Sensors).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications

AU - Niu, Yunfan

AU - Mo, Jiarui

AU - May, Alexander

AU - Rommel, Mathias

AU - Rossi, Chiara

AU - Romijn, Joost

AU - Zhang, Guoqi

AU - Vollebregt, Sten

N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2023

Y1 - 2023

N2 - This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of ADCs, i.e., a 4-bit flash ADC and a 6-bit successive-approximation (SAR) ADC, are designed and simulated up to 300 degrees Celsius. The measurement results show that the 4-bit SiC flash ADC can operate reliably up to at least 200 degrees Celsius, which outperforms the Si counterpart regarding the maximum operating temperature.

AB - This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of ADCs, i.e., a 4-bit flash ADC and a 6-bit successive-approximation (SAR) ADC, are designed and simulated up to 300 degrees Celsius. The measurement results show that the 4-bit SiC flash ADC can operate reliably up to at least 200 degrees Celsius, which outperforms the Si counterpart regarding the maximum operating temperature.

KW - analog-to-digital converter

KW - harsh-environment

KW - silicon carbide

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BT - Proceedings of the 2023 IEEE SENSORS

PB - IEEE

CY - Piscataway

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Y2 - 29 October 2023 through 1 November 2023

ER -

Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications

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