Design, Fabrication, and Characterization of a 4H-SiC CMOS Readout Circuit for Monolithic Integration with SiC Sensors

Romina Sattari; Henk van Zeijl; Guoqi Zhang

doi:10.23919/EMPC55870.2023.10418435

Design, Fabrication, and Characterization of a 4H-SiC CMOS Readout Circuit for Monolithic Integration with SiC Sensors

Romina Sattari, Henk van Zeijl, Guoqi Zhang

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

This paper reports the design and fabrication of a 4H-SiC CMOS readout circuit enabling monolithic integration of silicon carbide (SiC) sensors and circuits. Compared to conventional Si electronics, 4H-SiC integrated circuits can sustain operation in harsh conditions such as higher temperatures and radiation levels. The proposed amplifier performance is well balanced through the temperature range of 25 °C to 400 °C. Compared to state-of-the-art, the proposed SiC readout circuit does not include any off-chip components. The amplifier is fully differential, and hence shows improved common-mode rejection and signal-to-noise ratio (SNR). It can be monolithically integrated with SiC sensors in a scalable SiC technology.

Original language	English
Title of host publication	Proceedings of the 2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC)
Publisher	IEEE
Pages	1-3
Number of pages	3
ISBN (Electronic)	978-0-9568086-9-1
ISBN (Print)	978-1-6654-8736-8
DOIs	https://doi.org/10.23919/EMPC55870.2023.10418435
Publication status	Published - 2023
Event	2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC) - Cambridge, United Kingdom Duration: 11 Sept 2023 → 14 Sept 2023 Conference number: 24th

Publication series

Name	24th European Microelectronics and Packaging Conference, EMPC 2023

Conference

Conference	2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC)
Country/Territory	United Kingdom
City	Cambridge
Period	11/09/23 → 14/09/23

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

ability
SiC technology
monolithic integration
readout circuit
off-chip component
fully differential
common-mode rejection
signal-to-noise ratio (SNR)

Access to Document

10.23919/EMPC55870.2023.10418435

Cite this

Sattari, R., van Zeijl, H., & Zhang, G. (2023). Design, Fabrication, and Characterization of a 4H-SiC CMOS Readout Circuit for Monolithic Integration with SiC Sensors. In Proceedings of the 2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC) (pp. 1-3). (24th European Microelectronics and Packaging Conference, EMPC 2023). IEEE. https://doi.org/10.23919/EMPC55870.2023.10418435

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title = "Design, Fabrication, and Characterization of a 4H-SiC CMOS Readout Circuit for Monolithic Integration with SiC Sensors",

abstract = "This paper reports the design and fabrication of a 4H-SiC CMOS readout circuit enabling monolithic integration of silicon carbide (SiC) sensors and circuits. Compared to conventional Si electronics, 4H-SiC integrated circuits can sustain operation in harsh conditions such as higher temperatures and radiation levels. The proposed amplifier performance is well balanced through the temperature range of 25 °C to 400 °C. Compared to state-of-the-art, the proposed SiC readout circuit does not include any off-chip components. The amplifier is fully differential, and hence shows improved common-mode rejection and signal-to-noise ratio (SNR). It can be monolithically integrated with SiC sensors in a scalable SiC technology.",

keywords = "ability, SiC technology, monolithic integration, readout circuit, off-chip component, fully differential, common-mode rejection, signal-to-noise ratio (SNR)",

author = "Romina Sattari and {van Zeijl}, Henk and Guoqi Zhang",

note = "Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC) ; Conference date: 11-09-2023 Through 14-09-2023",

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Sattari, R , van Zeijl, H & Zhang, G 2023, Design, Fabrication, and Characterization of a 4H-SiC CMOS Readout Circuit for Monolithic Integration with SiC Sensors. in Proceedings of the 2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC). 24th European Microelectronics and Packaging Conference, EMPC 2023, IEEE, pp. 1-3, 2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC), Cambridge, United Kingdom, 11/09/23. https://doi.org/10.23919/EMPC55870.2023.10418435

Design, Fabrication, and Characterization of a 4H-SiC CMOS Readout Circuit for Monolithic Integration with SiC Sensors. / Sattari, Romina ; van Zeijl, Henk ; Zhang, Guoqi.
Proceedings of the 2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC). IEEE, 2023. p. 1-3 (24th European Microelectronics and Packaging Conference, EMPC 2023).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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N2 - This paper reports the design and fabrication of a 4H-SiC CMOS readout circuit enabling monolithic integration of silicon carbide (SiC) sensors and circuits. Compared to conventional Si electronics, 4H-SiC integrated circuits can sustain operation in harsh conditions such as higher temperatures and radiation levels. The proposed amplifier performance is well balanced through the temperature range of 25 °C to 400 °C. Compared to state-of-the-art, the proposed SiC readout circuit does not include any off-chip components. The amplifier is fully differential, and hence shows improved common-mode rejection and signal-to-noise ratio (SNR). It can be monolithically integrated with SiC sensors in a scalable SiC technology.

AB - This paper reports the design and fabrication of a 4H-SiC CMOS readout circuit enabling monolithic integration of silicon carbide (SiC) sensors and circuits. Compared to conventional Si electronics, 4H-SiC integrated circuits can sustain operation in harsh conditions such as higher temperatures and radiation levels. The proposed amplifier performance is well balanced through the temperature range of 25 °C to 400 °C. Compared to state-of-the-art, the proposed SiC readout circuit does not include any off-chip components. The amplifier is fully differential, and hence shows improved common-mode rejection and signal-to-noise ratio (SNR). It can be monolithically integrated with SiC sensors in a scalable SiC technology.

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KW - SiC technology

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Sattari R , van Zeijl H , Zhang G. Design, Fabrication, and Characterization of a 4H-SiC CMOS Readout Circuit for Monolithic Integration with SiC Sensors. In Proceedings of the 2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC). IEEE. 2023. p. 1-3. (24th European Microelectronics and Packaging Conference, EMPC 2023). doi: 10.23919/EMPC55870.2023.10418435

Design, Fabrication, and Characterization of a 4H-SiC CMOS Readout Circuit for Monolithic Integration with SiC Sensors

Abstract

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Keywords

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