Enhancing thermal degradation stability of BaSi₂O₂N₂:Eu²⁺ for white light-emitting diodes by ultra-thin Al₂O₃ layer via atomic layer deposition

The cyan-emitting BaSi₂O₂N₂:Eu²⁺ phosphor is a promising narrow-band and high-efficiency luminescent material used in wide-color-gamut white light-emitting diodes (wLEDs). However, its serious degradation under thermal attacks hinders its practical applications and needs to be improved. Herein, we proposed to deposit a nano-sized Al₂O₃ film around each BaSi₂O₂N₂:Eu²⁺ particle through atomic layer deposition (ALD) in a fluidized bed reactor to improve its thermal stability. Thermal gravimetric analysis results showed that the Al₂O₃ layer with a thickness of only 11 nm had an obvious anti-oxidization effect, by which the oxidation temperature in air of the Al₂O₃ coated phosphor was largely increased from ∼550 to ∼750 °C. Moreover, the Al₂O₃ coated phosphor remained 93% of its luminescence intensity in comparison to 73% of the uncoated one when degraded under water-steam at 200 °C for 24 h. The oxidization of both the BaSi₂O₂N₂ host matrix and the doped Eu²⁺ ions was reduced by the Al₂O₃ layer. Meanwhile, the wLEDs fabricated with the Al₂O₃ coated phosphor showed a luminous flux of 3 times higher than that of the uncoated one when aged under 100 mA for 300 h. The greatly improved thermal degradation property of BaSi₂O₂N₂:Eu²⁺ phosphor and the reliability of the wLEDs indicate that the ALD approach could be a feasible route to produce uniform and nano layers on phosphors and enhance their stability.