Fabrication of 6T SRAM cell using single grain TFTs obtained by ¿-Czochralski process

N Golshani, J Derakhshandeh, R Ishihara, CIM Beenakker

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	Proc. of AMFPD'09
Editors	H Hamada
Place of Publication	s.l.
Publisher	Japan Society of Applied Physics
Pages	255-258
Number of pages	4
ISBN (Print)	978-4-903968-81-0
Publication status	Published - 2009

Name
Publisher	The Japan Society of Applied Physics

Keywords

@inproceedings{ad33163c077c420bb326ec0158608dd6,

title = "Fabrication of 6T SRAM cell using single grain TFTs obtained by ¿-Czochralski process",

keywords = "Elektrotechniek, Techniek, Conf.proc. > 3 pag",

author = "N Golshani and J Derakhshandeh and R Ishihara and CIM Beenakker",

year = "2009",

language = "Undefined/Unknown",

isbn = "978-4-903968-81-0",

publisher = "Japan Society of Applied Physics",

pages = "255--258",

editor = "H Hamada",

booktitle = "Proc. of AMFPD'09",

address = "Japan",

}

TY - GEN

T1 - Fabrication of 6T SRAM cell using single grain TFTs obtained by ¿-Czochralski process

AU - Golshani, N

AU - Derakhshandeh, J

AU - Ishihara, R

AU - Beenakker, CIM

PY - 2009

Y1 - 2009

KW - Elektrotechniek

KW - Techniek

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 978-4-903968-81-0

SP - 255

EP - 258

BT - Proc. of AMFPD'09

A2 - Hamada, H

PB - Japan Society of Applied Physics

CY - s.l.

ER -