Gate oxide induced switch-on undershoot current observed in thin-film transistors

F Yan; P Migliorato; Y Hong; V Rana; R Ishihara; Y Hiroshima; D Abe; S Inoue; T Shimoda

doi:doi:10.1063/1.1954896

Gate oxide induced switch-on undershoot current observed in thin-film transistors

F Yan, P Migliorato, Y Hong, V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

14 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	25
DOIs	https://doi.org/doi:10.1063/1.1954896
Publication status	Published - 2005

Keywords

academic journal papers
ZX CWTS 1.00 <= JFIS < 3.00

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doi:10.1063/1.1954896

Cite this

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title = "Gate oxide induced switch-on undershoot current observed in thin-film transistors",

keywords = "academic journal papers, ZX CWTS 1.00 <= JFIS < 3.00",

author = "F Yan and P Migliorato and Y Hong and V Rana and R Ishihara and Y Hiroshima and D Abe and S Inoue and T Shimoda",

year = "2005",

doi = "doi:10.1063/1.1954896",

language = "Undefined/Unknown",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Gate oxide induced switch-on undershoot current observed in thin-film transistors

AU - Yan, F

AU - Migliorato, P

AU - Hong, Y

AU - Rana, V

AU - Ishihara, R

AU - Hiroshima, Y

AU - Abe, D

AU - Inoue, S

AU - Shimoda, T

PY - 2005

Y1 - 2005

KW - academic journal papers

KW - ZX CWTS 1.00 <= JFIS < 3.00

U2 - doi:10.1063/1.1954896

DO - doi:10.1063/1.1954896

M3 - Article

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -