High-Quality Amorphous Silicon Carbide for Hybrid Photonic Integration Deposited at a Low Temperature

Bruno Lopez-Rodriguez*, Roald van der Kolk, Samarth Aggarwal, Naresh Sharma, Zizheng Li, Daniel van der Plaats, Thomas Scholte, Jin Chang, Simon Gröblacher, Silvania F. Pereira, Harish Bhaskaran, Iman Esmaeil Zadeh

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Integrated photonic platforms have proliferated in recent years, each demonstrating its unique strengths and shortcomings. Given the processing incompatibilities of different platforms, a formidable challenge in the field of integrated photonics still remains for combining the strengths of different optical materials in one hybrid integrated platform. Silicon carbide is a material of great interest because of its high refractive index, strong second- and third-order nonlinearities, and broad transparency window in the visible and near-infrared range. However, integrating silicon carbide (SiC) has been difficult, and current approaches rely on transfer bonding techniques that are time-consuming, expensive, and lacking precision in layer thickness. Here, we demonstrate high-index amorphous silicon carbide (a-SiC) films deposited at 150 °C and verify the high performance of the platform by fabricating standard photonic waveguides and ring resonators. The intrinsic quality factors of single-mode ring resonators were in the range of Qint = (4.7-5.7) × 105 corresponding to optical losses between 0.78 and 1.06 dB/cm. We then demonstrate the potential of this platform for future heterogeneous integration with ultralow-loss thin SiN and LiNbO3 platforms.

Original languageEnglish
Pages (from-to)3748-3754
JournalACS Photonics
Volume10
Issue number10
DOIs
Publication statusPublished - 2023

Keywords

  • hybrid integration
  • low loss
  • low temperature
  • ring resonator
  • silicon carbide

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