Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (Sbd) by inductively coupled plasma (icp) and device characteristics

Yue Sun, Xuanwu Kang*, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu, Guoqi Zhang

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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