Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor

Jinglin  Li; Sten Vollebregt; Yaqian Zhang; Aditya  Shekhar; Alexander  May; Willem D. van Driel; Guoqi Zhang

doi:10.1109/EuroSimE60745.2024.10491433

Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor

Jinglin Li^*, Sten Vollebregt, Yaqian Zhang, Aditya Shekhar, Alexander May, Willem D. van Driel, Guoqi Zhang

^*Corresponding author for this work

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

Due to the deficient passivation of the interface between silicon carbide and silicon dioxide, the defect-induced capture and release of trapped charges triggered by external Bias Temperature Stress (BTS) leads to parameter shifts and degraded device performance. This study models the trap-induced transient current in silicon carbide metal-oxide-semiconductor capacitors, providing insight into how capacitance and conductance change during C-V measurements under conditions of high temperature, varied frequency, and varied applied voltage.

Original language	English
Title of host publication	Proceedings of the 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
Publisher	IEEE
Number of pages	6
ISBN (Electronic)	979-8-3503-9363-7
ISBN (Print)	979-8-3503-9364-4
DOIs	https://doi.org/10.1109/EuroSimE60745.2024.10491433
Publication status	Published - 2024
Event	2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) - Catania, Italy Duration: 7 Apr 2024 → 10 Apr 2024 Conference number: 25th

Publication series

Name	International Conference on Thermal, Mechanical and Multi-physics Simulation and Experiments in Microelectronics and Microsystems
ISSN (Print)	2833-8553
ISSN (Electronic)	2833-8596

Conference

Conference	2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
Abbreviated title	EuriSimE 2024
Country/Territory	Italy
City	Catania
Period	7/04/24 → 10/04/24

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

Temperature measurement
Vibrations
Electron traps
Temperature dependence
Voltage measurement
Silicon carbide
Lattices

Access to Document

10.1109/EuroSimE60745.2024.10491433

Embargoed Document

Temperature_dependent_trap_characterisation_and_modelling_of_silicon_carbide_MOS_capacitor
Final published version, 1.33 MB
Embargo ends: 9/10/24

Cite this

Li, J., Vollebregt, S., Zhang, Y., Shekhar, A., May, A., van Driel, W. D., & Zhang, G. (2024). Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor. In Proceedings of the 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) (International Conference on Thermal, Mechanical and Multi-physics Simulation and Experiments in Microelectronics and Microsystems). IEEE. https://doi.org/10.1109/EuroSimE60745.2024.10491433

Li, Jinglin ; Vollebregt, Sten ; Zhang, Yaqian et al. / Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor. Proceedings of the 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2024. (International Conference on Thermal, Mechanical and Multi-physics Simulation and Experiments in Microelectronics and Microsystems).

@inproceedings{eca2f805ac1243f9aebed8815b0f81bc,

title = "Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor",

abstract = "Due to the deficient passivation of the interface between silicon carbide and silicon dioxide, the defect-induced capture and release of trapped charges triggered by external Bias Temperature Stress (BTS) leads to parameter shifts and degraded device performance. This study models the trap-induced transient current in silicon carbide metal-oxide-semiconductor capacitors, providing insight into how capacitance and conductance change during C-V measurements under conditions of high temperature, varied frequency, and varied applied voltage.",

keywords = "Temperature measurement, Vibrations, Electron traps, Temperature dependence, Voltage measurement, Silicon carbide, Lattices",

author = "Jinglin Li and Sten Vollebregt and Yaqian Zhang and Aditya Shekhar and Alexander May and {van Driel}, {Willem D.} and Guoqi Zhang",

note = "Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), EuriSimE 2024 ; Conference date: 07-04-2024 Through 10-04-2024",

year = "2024",

doi = "10.1109/EuroSimE60745.2024.10491433",

language = "English",

isbn = "979-8-3503-9364-4",

series = "International Conference on Thermal, Mechanical and Multi-physics Simulation and Experiments in Microelectronics and Microsystems",

publisher = "IEEE",

booktitle = "Proceedings of the 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)",

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}

Li, J , Vollebregt, S , Zhang, Y , Shekhar, A, May, A, van Driel, WD & Zhang, G 2024, Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor. in Proceedings of the 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). International Conference on Thermal, Mechanical and Multi-physics Simulation and Experiments in Microelectronics and Microsystems, IEEE, 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Catania, Italy, 7/04/24. https://doi.org/10.1109/EuroSimE60745.2024.10491433

Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor. / Li, Jinglin ; Vollebregt, Sten ; Zhang, Yaqian et al.
Proceedings of the 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2024. (International Conference on Thermal, Mechanical and Multi-physics Simulation and Experiments in Microelectronics and Microsystems).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor

AU - Li, Jinglin

AU - Vollebregt, Sten

AU - Zhang, Yaqian

AU - Shekhar, Aditya

AU - May, Alexander

AU - van Driel, Willem D.

AU - Zhang, Guoqi

N1 - Conference code: 25th

PY - 2024

Y1 - 2024

N2 - Due to the deficient passivation of the interface between silicon carbide and silicon dioxide, the defect-induced capture and release of trapped charges triggered by external Bias Temperature Stress (BTS) leads to parameter shifts and degraded device performance. This study models the trap-induced transient current in silicon carbide metal-oxide-semiconductor capacitors, providing insight into how capacitance and conductance change during C-V measurements under conditions of high temperature, varied frequency, and varied applied voltage.

AB - Due to the deficient passivation of the interface between silicon carbide and silicon dioxide, the defect-induced capture and release of trapped charges triggered by external Bias Temperature Stress (BTS) leads to parameter shifts and degraded device performance. This study models the trap-induced transient current in silicon carbide metal-oxide-semiconductor capacitors, providing insight into how capacitance and conductance change during C-V measurements under conditions of high temperature, varied frequency, and varied applied voltage.

KW - Temperature measurement

KW - Vibrations

KW - Electron traps

KW - Temperature dependence

KW - Voltage measurement

KW - Silicon carbide

KW - Lattices

U2 - 10.1109/EuroSimE60745.2024.10491433

DO - 10.1109/EuroSimE60745.2024.10491433

M3 - Conference contribution

SN - 979-8-3503-9364-4

T3 - International Conference on Thermal, Mechanical and Multi-physics Simulation and Experiments in Microelectronics and Microsystems

BT - Proceedings of the 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

PB - IEEE

T2 - 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

Y2 - 7 April 2024 through 10 April 2024

ER -

Li J , Vollebregt S , Zhang Y , Shekhar A, May A, van Driel WD et al. Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor. In Proceedings of the 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE. 2024. (International Conference on Thermal, Mechanical and Multi-physics Simulation and Experiments in Microelectronics and Microsystems). doi: 10.1109/EuroSimE60745.2024.10491433

Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Embargoed Document

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Cite this