Abstract
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined in silicon metal oxide semiconductor Hall-bar transistors. These silicon metal oxide semiconductor Hall bars are made by advanced semiconductor manufacturing on 300 mm silicon wafers and support a two-dimensional electron gas of high quality with a maximum mobility of 17.6×103 cm2/Vs and minimum percolation density of 3.45×1010 cm-2. Because of the low disorder, we observe beatings in the Shubnikov-de Haas oscillations that arise from the energy splitting of the two low-lying conduction band valleys. From the analysis of the oscillations beating patterns up to T=1.7 K, we estimate a maximum valley splitting of ?EVS=8.2 meV at a density of 6.8×1012 cm-2. Furthermore, the valley splitting increases with density at a rate consistent with theoretical predictions for a near-ideal semiconductor-oxide interface.
Original language | English |
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Article number | 176603 |
Number of pages | 5 |
Journal | Physical Review Letters |
Volume | 128 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2022 |
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Valley splitting in silicon from the interference pattern of quantum oscillations
Scappucci, G. (Creator) & Lodari, M. (Creator), TU Delft - 4TU.ResearchData, 15 Dec 2021
DOI: 10.4121/17136608
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