INIS
barriers
33%
charges
16%
devices
50%
doped materials
33%
fabrication
16%
field effect transistors
100%
gallium antimonides
16%
gallium arsenides
100%
interfaces
16%
khz range
16%
metals
100%
nanowires
100%
operation
16%
oxides
33%
peaks
16%
performance
33%
semiconductor materials
100%
shells
33%
transistors
16%
trapping
16%
Material Science
Charge Trapping
16%
Complementary Metal-Oxide-Semiconductor Device
16%
Contact Resistance
33%
Devices
50%
Electronic Circuit
16%
Electronics
16%
Field Effect Transistor
100%
Gallium Arsenide
100%
Metal
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Nanowire
100%
Schottky Barrier
33%
Semiconductor Material
100%
Transistor
16%
Engineering
Complementary Metal-Oxide-Semiconductor
16%
Field-Effect Transistor
100%
Networks (Circuits)
16%
Obtains
33%
Semiconductor
100%