Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Joost Romijn*, Luke M. Middelburg, Sten Vollebregt, Brahim el Mansouri, Henk W. van Zeijl, Alexander May, Tobias Erlbacher , Guoqi Zhang, Pasqualina M. Sarro

*Corresponding author for this work

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review


Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of resistance, with a maximum change of 79%. Secondly, CMOS devices are used to implement a CTAT, which achieves a maximum sensitivity of 7.5mV/K in a temperature range of 25-165°C. The integration of readout electronics and sensors that are capable of operation in higher temperature than silicon, opens application in harsher environments.
Original languageEnglish
Title of host publication2021 IEEE Sensors
Subtitle of host publicationProceedings
Place of PublicationPiscataway
Number of pages4
ISBN (Electronic)978-1-7281-9501-8
ISBN (Print)978-1-7281-9502-5
Publication statusPublished - 2021
Event2021 IEEE Sensors - Online at Sydney, Australia
Duration: 31 Oct 20213 Nov 2021


Conference2021 IEEE Sensors
CityOnline at Sydney

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project

Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.


  • 4H-SiC
  • SiC CMOS
  • silicon carbide
  • temperature sensor
  • wide bandgap semiconductors


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