INIS
intermediate state
100%
defects
100%
devices
100%
modeling
100%
magnetic tunnel junctions
71%
simulation
42%
silicon
42%
data
28%
solutions
28%
manufacturing
14%
voltage
14%
compacts
14%
space
14%
resistors
14%
probability
14%
size
14%
Keyphrases
Spin-transfer Torque Magnetic RAM (STT-MRAM)
100%
Intermediate State
100%
Magnetic Tunnel Junction
83%
Device-aware Test
50%
Circuit Simulation
33%
Quality Test
16%
Verilog
16%
Fault Model
16%
Resistive State
16%
Fault Space
16%
Faulty Behavior
16%
Measurement Simulation
16%
Compact Model
16%
Fault Test
16%
Fault Analysis
16%
Resistor-based
16%
Stable State
16%
Device-independent
16%
Systematic Fault
16%
Device Sizing
16%
Transition Faults
16%
Bias Voltage
16%
Manufacturing Process
16%
Data Storage
16%
Advanced Devices
16%
Engineering
Defects
100%
Magnetic Tunnel Junction
71%
Models
57%
Measurement
28%
Test Solution
28%
Circuit Simulation
28%
Stable State
14%
Resistive
14%
Storing Data
14%
Occurrence Probability
14%
Simulation Result
14%
Bias Voltage
14%
High Quality
14%
Manufacturing Process
14%
Elements
14%
Resistor
14%
Computer Science
Modeling
100%
Intermediate State
100%
Model
66%
Circuit Simulation
33%
Probability
16%
Verilog
16%
Systematic Fault
16%
Material Science
Devices
100%
Characterization
100%
Silicon
42%
Electronic Circuit
28%