Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs

S. Yuan; Z. Zhang; M. Fieback; H. Xun; E. J. Marinissen; G. S. Kar; S. Rao; S. Couet; M. Taouil; S. Hamdioui

doi:10.1109/ITC51656.2023.00040

Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs

S. Yuan, Z. Zhang, M. Fieback, H. Xun, E. J. Marinissen, G. S. Kar, S. Rao, S. Couet, M. Taouil, S. Hamdioui

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Abstract

The development of Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) mass production requires high-quality test solutions. Accurate and appropriate fault modeling is crucial for the realization of such solutions. This paper targets fault modeling and test generation for all interconnect and contact defects in STT-MRAMs and shows that using the defect injection and circuit simulation for fault modeling without incorporating the impact of magnetic coupling will result in an incomplete set of fault models; hence, not obtaining accurate fault models. Magnetic coupling introduced by the stray field is an inherent property of STT-MRAMs and may foster the occurrence of additional memory faults. Not considering the magnetic coupling clearly will give rise to test escapes. The paper introduces a compact model for STT-MRAM that incorporates the intra- and inter-cell stray field, uses this model to derive the full set of fault models for interconnect and contact defects, and finally proposes an efficient test solution.

Original language	English
Title of host publication	Proceedings - 2023 IEEE International Test Conference, ITC 2023
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	236-245
Number of pages	10
ISBN (Electronic)	9798350343250
DOIs	https://doi.org/10.1109/ITC51656.2023.00040
Publication status	Published - 2023
Event	2023 IEEE International Test Conference, ITC 2023 - Anaheim, United States Duration: 7 Oct 2023 → 15 Oct 2023

Publication series

Name	Proceedings - International Test Conference
ISSN (Print)	1089-3539

Conference

Conference	2023 IEEE International Test Conference, ITC 2023
Country/Territory	United States
City	Anaheim
Period	7/10/23 → 15/10/23

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

fault modeling
magnetic coupling
stray field
STT-MRAM
test development

Access to Document

10.1109/ITC51656.2023.00040

Cite this

Yuan, S., Zhang, Z., Fieback, M., Xun, H., Marinissen, E. J., Kar, G. S., Rao, S., Couet, S., Taouil, M., & Hamdioui, S. (2023). Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs. In Proceedings - 2023 IEEE International Test Conference, ITC 2023 (pp. 236-245). (Proceedings - International Test Conference). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ITC51656.2023.00040

@inproceedings{159c99eab65c4638b189cde385e71e12,

title = "Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs",

abstract = "The development of Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) mass production requires high-quality test solutions. Accurate and appropriate fault modeling is crucial for the realization of such solutions. This paper targets fault modeling and test generation for all interconnect and contact defects in STT-MRAMs and shows that using the defect injection and circuit simulation for fault modeling without incorporating the impact of magnetic coupling will result in an incomplete set of fault models; hence, not obtaining accurate fault models. Magnetic coupling introduced by the stray field is an inherent property of STT-MRAMs and may foster the occurrence of additional memory faults. Not considering the magnetic coupling clearly will give rise to test escapes. The paper introduces a compact model for STT-MRAM that incorporates the intra- and inter-cell stray field, uses this model to derive the full set of fault models for interconnect and contact defects, and finally proposes an efficient test solution.",

keywords = "fault modeling, magnetic coupling, stray field, STT-MRAM, test development",

author = "S. Yuan and Z. Zhang and M. Fieback and H. Xun and Marinissen, {E. J.} and Kar, {G. S.} and S. Rao and S. Couet and M. Taouil and S. Hamdioui",

note = "Green Open Access added to TU Delft Institutional Repository {\textquoteleft}You share, we take care!{\textquoteright} – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. ; 2023 IEEE International Test Conference, ITC 2023 ; Conference date: 07-10-2023 Through 15-10-2023",

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doi = "10.1109/ITC51656.2023.00040",

language = "English",

series = "Proceedings - International Test Conference",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "236--245",

booktitle = "Proceedings - 2023 IEEE International Test Conference, ITC 2023",

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Yuan, S, Zhang, Z, Fieback, M , Xun, H, Marinissen, EJ, Kar, GS, Rao, S, Couet, S, Taouil, M & Hamdioui, S 2023, Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs. in Proceedings - 2023 IEEE International Test Conference, ITC 2023. Proceedings - International Test Conference, Institute of Electrical and Electronics Engineers (IEEE), pp. 236-245, 2023 IEEE International Test Conference, ITC 2023, Anaheim, United States, 7/10/23. https://doi.org/10.1109/ITC51656.2023.00040

Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs. / Yuan, S.; Zhang, Z.; Fieback, M. et al.
Proceedings - 2023 IEEE International Test Conference, ITC 2023. Institute of Electrical and Electronics Engineers (IEEE), 2023. p. 236-245 (Proceedings - International Test Conference).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

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AU - Xun, H.

AU - Marinissen, E. J.

AU - Kar, G. S.

AU - Rao, S.

AU - Couet, S.

AU - Taouil, M.

AU - Hamdioui, S.

N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2023

Y1 - 2023

N2 - The development of Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) mass production requires high-quality test solutions. Accurate and appropriate fault modeling is crucial for the realization of such solutions. This paper targets fault modeling and test generation for all interconnect and contact defects in STT-MRAMs and shows that using the defect injection and circuit simulation for fault modeling without incorporating the impact of magnetic coupling will result in an incomplete set of fault models; hence, not obtaining accurate fault models. Magnetic coupling introduced by the stray field is an inherent property of STT-MRAMs and may foster the occurrence of additional memory faults. Not considering the magnetic coupling clearly will give rise to test escapes. The paper introduces a compact model for STT-MRAM that incorporates the intra- and inter-cell stray field, uses this model to derive the full set of fault models for interconnect and contact defects, and finally proposes an efficient test solution.

AB - The development of Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) mass production requires high-quality test solutions. Accurate and appropriate fault modeling is crucial for the realization of such solutions. This paper targets fault modeling and test generation for all interconnect and contact defects in STT-MRAMs and shows that using the defect injection and circuit simulation for fault modeling without incorporating the impact of magnetic coupling will result in an incomplete set of fault models; hence, not obtaining accurate fault models. Magnetic coupling introduced by the stray field is an inherent property of STT-MRAMs and may foster the occurrence of additional memory faults. Not considering the magnetic coupling clearly will give rise to test escapes. The paper introduces a compact model for STT-MRAM that incorporates the intra- and inter-cell stray field, uses this model to derive the full set of fault models for interconnect and contact defects, and finally proposes an efficient test solution.

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KW - magnetic coupling

KW - stray field

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M3 - Conference contribution

AN - SCOPUS:85179180154

T3 - Proceedings - International Test Conference

SP - 236

EP - 245

BT - Proceedings - 2023 IEEE International Test Conference, ITC 2023

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 2023 IEEE International Test Conference, ITC 2023

Y2 - 7 October 2023 through 15 October 2023

ER -

Yuan S, Zhang Z, Fieback M , Xun H, Marinissen EJ, Kar GS et al. Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs. In Proceedings - 2023 IEEE International Test Conference, ITC 2023. Institute of Electrical and Electronics Engineers (IEEE). 2023. p. 236-245. (Proceedings - International Test Conference). doi: 10.1109/ITC51656.2023.00040

Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs

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Keywords

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